RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
A-DATA Technology VDQVE1B16 2GB
Hynix Semiconductor (Hyundai Electronics) HMA81GS6MFR8N-UH 8GB
Compare
A-DATA Technology VDQVE1B16 2GB vs Hynix Semiconductor (Hyundai Electronics) HMA81GS6MFR8N-UH 8GB
Overall score
A-DATA Technology VDQVE1B16 2GB
Overall score
Hynix Semiconductor (Hyundai Electronics) HMA81GS6MFR8N-UH 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
A-DATA Technology VDQVE1B16 2GB
Report a bug
Faster reading speed, GB/s
4
13.5
Average value in the tests
Faster write speed, GB/s
2,061.2
11.3
Average value in the tests
Reasons to consider
Hynix Semiconductor (Hyundai Electronics) HMA81GS6MFR8N-UH 8GB
Report a bug
Below the latency in the PassMark tests, ns
27
46
Around -70% lower latency
Higher memory bandwidth, mbps
19200
6400
Around 3 higher bandwidth
Specifications
Complete list of technical specifications
A-DATA Technology VDQVE1B16 2GB
Hynix Semiconductor (Hyundai Electronics) HMA81GS6MFR8N-UH 8GB
Main characteristics
Memory type
DDR2
DDR4
Latency in PassMark, ns
46
27
Read speed, GB/s
4,937.3
13.5
Write speed, GB/s
2,061.2
11.3
Memory bandwidth, mbps
6400
19200
Other
Description
PC2-6400, SSTL 1.8V, CAS Supported: 3 4 5
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
Timings / Clock speed
5-5-5-15 / 800 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
Ranking PassMark (The more the better)
759
2430
A-DATA Technology VDQVE1B16 2GB RAM comparisons
takeMS International AG TMS2GS264D082665EQ 2GB
Qimonda 64T64000EU3SB2 512MB
Hynix Semiconductor (Hyundai Electronics) HMA81GS6MFR8N-UH 8GB RAM comparisons
Kingston ACR16D3LS1NGG/2G 2GB
Kingmax Semiconductor FLGG45F-E8K3B 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Samsung M3 78T5663RZ3-CF7 2GB
Ramaxel Technology RMUA5200MR78HAF-3200 8GB
Samsung M471B5273DH0-CH9 4GB
Wilk Elektronik S.A. IRX3000D464L16/16G 16GB
A-DATA Technology AM2L16BC4R1-B0AS 4GB
Hynix Semiconductor (Hyundai Electronics) HMAA4GU6AJR8N
Kingston ACR512X64D3S13C9G 4GB
Crucial Technology CT16G4SFD8213.C16FBR 16GB
AMD R538G1601U2S 8GB
AMD R538G1601S2LS 8GB
A-DATA Technology DDR3 1600 4GB
Kingston 99U5723-002.A00G 8GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Corsair CMD16GX4M2B3733C17 8GB
Samsung M3 78T5663RZ3-CF7 2GB
Gold Key Technology Co Ltd NMSO416E82-3200E 16GB
SK Hynix HMT325S6CFR8C-PB 2GB
Kingston 9905678-041.A00G 4GB
G Skill Intl F5-6400J3239G16G 16GB
G Skill Intl F4-2666C15-8GVR 8GB
G Skill Intl F2-5300CL4-1GBSA 1GB
SK Hynix HMA851S6AFR6N-UH 4GB
Samsung M391B5673EH1-CH9 2GB
G Skill Intl F4-3000C15-4GVSB 4GB
Crucial Technology CT25664BA160B.C16F 2GB
Mushkin MR[A/B]4U280HHHH8G 8GB
Kingston 99U5458-008.A00LF 4GB
A-DATA Technology AO1P24HC4N2-BWCS 4GB
Report a bug
×
Bug description
Source link