RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Corsair CMY8GX3M2A2666C10 4GB
Hynix Semiconductor (Hyundai Electronics) HMA851S6CJR6N-UH 4GB
Compare
Corsair CMY8GX3M2A2666C10 4GB vs Hynix Semiconductor (Hyundai Electronics) HMA851S6CJR6N-UH 4GB
Overall score
Corsair CMY8GX3M2A2666C10 4GB
Overall score
Hynix Semiconductor (Hyundai Electronics) HMA851S6CJR6N-UH 4GB
Differences
Specifications
Comments
Differences
Reasons to consider
Corsair CMY8GX3M2A2666C10 4GB
Report a bug
Below the latency in the PassMark tests, ns
17
26
Around 35% lower latency
Faster reading speed, GB/s
22.8
15.6
Average value in the tests
Faster write speed, GB/s
15.4
11.8
Average value in the tests
Reasons to consider
Hynix Semiconductor (Hyundai Electronics) HMA851S6CJR6N-UH 4GB
Report a bug
Higher memory bandwidth, mbps
19200
10600
Around 1.81 higher bandwidth
Specifications
Complete list of technical specifications
Corsair CMY8GX3M2A2666C10 4GB
Hynix Semiconductor (Hyundai Electronics) HMA851S6CJR6N-UH 4GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
17
26
Read speed, GB/s
22.8
15.6
Write speed, GB/s
15.4
11.8
Memory bandwidth, mbps
10600
19200
Other
Description
PC3-10600, 1.5V, CAS Supported: 6 7 9
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
Timings / Clock speed
7-7-7-20 / 1333 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
Ranking PassMark (The more the better)
3391
2382
Corsair CMY8GX3M2A2666C10 4GB RAM comparisons
Micron Technology 4ATF1G64AZ-3G2B1 8GB
Crucial Technology CT8G48C40U5.M4A1 8GB
Hynix Semiconductor (Hyundai Electronics) HMA851S6CJR6N-UH 4GB RAM comparisons
Samsung M393B2G70BH0-CH9 16GB
Kingston 9905403-156.A00LF 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB
G Skill Intl F4-3200C16-16GTZN 16GB
Avant Technology F641GU67F9333G 8GB
A-DATA Technology AO2P26KC8T1-BC1S 8GB
Ramaxel Technology RMSA3260NA78HAF-2666 8GB
Micron Technology CT4G4DFS8213.8FA11 4GB
Samsung M378B5773DH0-CH9 2GB
G Skill Intl F4-3000C16-8GRS 8GB
Corsair CMZ16GX3M2A2400C10 8GB
Kingmax Semiconductor GZNG43F-18---------- 8GB
Kingston KHX1600C9D3/8G 8GB
G Skill Intl F4-3000C15-4GVRB 4GB
Ramos Technology EWB8GB681CA3-16IC 8GB
G Skill Intl F4-3000C15-8GTZB 8GB
Samsung M3 78T3354BZ0-CCC 256MB
G Skill Intl F4-3200C15-8GVK 8GB
Micron Technology 16JSF25664HZ-1G1F1 2GB
G Skill Intl F4-3600C14-16GVK 16GB
PUSKILL DDR3 1600 8G 8GB
Gloway International Co. Ltd. TYA4U2400D17081C 8GB
Kingston 9905403-090.A01LF 4GB
Micron Technology M471A1K43CB1-CTD 8GB
Samsung 1600 CL10 Series 8GB
Team Group Inc. TEAMGROUP-UD4-3600 8GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Corsair CMSX8GX4M2A2400C16 4GB
A-DATA Technology DDR3 1600 4GB
G Skill Intl F4-3200C14-8GVK 8GB
Report a bug
×
Bug description
Source link