RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Elpida EBJ40EG8BFWB-JS-F 4GB
OM Nanotech Pvt.Ltd V1D4L816GB2G82G83200 16GB
Compare
Elpida EBJ40EG8BFWB-JS-F 4GB vs OM Nanotech Pvt.Ltd V1D4L816GB2G82G83200 16GB
Overall score
Elpida EBJ40EG8BFWB-JS-F 4GB
Overall score
OM Nanotech Pvt.Ltd V1D4L816GB2G82G83200 16GB
Differences
Specifications
Comments
Differences
Reasons to consider
Elpida EBJ40EG8BFWB-JS-F 4GB
Report a bug
Below the latency in the PassMark tests, ns
26
30
Around 13% lower latency
Reasons to consider
OM Nanotech Pvt.Ltd V1D4L816GB2G82G83200 16GB
Report a bug
Faster reading speed, GB/s
16
13.9
Average value in the tests
Faster write speed, GB/s
10.6
9.6
Average value in the tests
Higher memory bandwidth, mbps
25600
14200
Around 1.8 higher bandwidth
Specifications
Complete list of technical specifications
Elpida EBJ40EG8BFWB-JS-F 4GB
OM Nanotech Pvt.Ltd V1D4L816GB2G82G83200 16GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
26
30
Read speed, GB/s
13.9
16.0
Write speed, GB/s
9.6
10.6
Memory bandwidth, mbps
14200
25600
Other
Description
PC3-14200, 1.5V, CAS Supported: 6 7 8 9 10 11 13
PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 28
Timings / Clock speed
no data
20-20-20, 22-22-22, 24-24-24 / 3200 MHz
Ranking PassMark (The more the better)
2558
3026
Elpida EBJ40EG8BFWB-JS-F 4GB RAM comparisons
Corsair CML4GX3M1A1600C9 4GB
Corsair CML4GX3M2A1600C9 2GB
OM Nanotech Pvt.Ltd V1D4L816GB2G82G83200 16GB RAM comparisons
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
SK Hynix HYMP112U64CP8-Y5 1GB
Micron Technology 18ASF2G72AZ-2G1B1 16GB
TwinMOS 8DHE3MN8-HATP 2GB
G Skill Intl F4-3400C16-8GSXW 8GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
G Skill Intl F4-4400C16-8GTRS 8GB
G Skill Intl F3-10600CL9-2GBNT 2GB
Transcend Information TS512MLH64V1H 4GB
Samsung M378B5673EH1-CF8 2GB
G Skill Intl F4-2400C17-8GSXW 8GB
AMD R538G1601U2S 8GB
G Skill Intl F4-2400C17-8GISM 8GB
ASint Technology SSA302G08-EGN1C 4GB
Kingston 9905622-024.A00G 4GB
Crucial Technology CT51264BD1339.M16F 4GB
Crucial Technology BL8G32C16U4BL.M8FE1 8GB
A-DATA Technology DDR3 1600 4GB
Kingston MSI21D4S15HAG/8G 8GB
Team Group Inc. ZEUS-2133 8GB
A-DATA Technology AO1E34RCSV1-BF1S 16GB
Samsung M393B1K70QB0-CK0 8GB
DSL Memory D4SS1G082SH21A-B 16GB
A-DATA Technology DQVE1908 512MB
Micron Technology 4ATF1G64AZ-3G2E1 8GB
Kingston 9965662-016.A00G 16GB
G Skill Intl F4-3333C16-4GRKD 4GB
Ramaxel Technology RMR5030ME68F9F1600 4GB
G Skill Intl F4-3466C16-16GTZSW 16GB
Report a bug
×
Bug description
Source link