RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
G Skill Intl F3-14900CL9-4GBSR 4GB
Micron Technology 16G2666CL19 16GB
Compare
G Skill Intl F3-14900CL9-4GBSR 4GB vs Micron Technology 16G2666CL19 16GB
Overall score
G Skill Intl F3-14900CL9-4GBSR 4GB
Overall score
Micron Technology 16G2666CL19 16GB
Differences
Specifications
Comments
Differences
Reasons to consider
G Skill Intl F3-14900CL9-4GBSR 4GB
Report a bug
Faster reading speed, GB/s
16.4
15.4
Average value in the tests
Faster write speed, GB/s
10.5
8.2
Average value in the tests
Reasons to consider
Micron Technology 16G2666CL19 16GB
Report a bug
Below the latency in the PassMark tests, ns
24
36
Around -50% lower latency
Higher memory bandwidth, mbps
21300
12800
Around 1.66 higher bandwidth
Specifications
Complete list of technical specifications
G Skill Intl F3-14900CL9-4GBSR 4GB
Micron Technology 16G2666CL19 16GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
36
24
Read speed, GB/s
16.4
15.4
Write speed, GB/s
10.5
8.2
Memory bandwidth, mbps
12800
21300
Other
Description
PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
Timings / Clock speed
9-9-9-24 / 1600 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
Ranking PassMark (The more the better)
2618
2438
G Skill Intl F3-14900CL9-4GBSR 4GB RAM comparisons
G Skill Intl F4-2133C15-4GVR 4GB
Corsair CMU32GX4M4C3466C16 8GB
Micron Technology 16G2666CL19 16GB RAM comparisons
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
A-DATA Technology AM2L16BC4R1-B0AS 4GB
Dust Leopard DDR4-2400 CL17 8GB 8GB
Samsung M471B5273DH0-CK0 4GB
Hynix Semiconductor (Hyundai Electronics) HMA451R7MFR8N
A-DATA Technology DQVE1908 512MB
EVGA 16G-D4-2800-MR 4GB
G Skill Intl F3-14900CL8-4GBXM 4GB
A-DATA Technology DDR4 2133 2OZ 8GB
Crucial Technology BLT4G3D1337DT1TX0. 4GB
G Skill Intl F4-3733C17-16GTZKK 16GB
Micron Technology 4ATF51264AZ-2G3B1 4GB
A-DATA Technology AM1P26KC4U1-BACS 4GB
G Skill Intl F4-4000C14-16GTZR 16GB
Apacer Technology GD2.1527WT.001 8GB
A-DATA Technology DQVE1908 512MB
Crucial Technology CT8G4DFD824A.C16FBD1 8GB
Smart Modular SG564568FG8N6KF-Z2 2GB
Kingmax Semiconductor GZOH23F-18---------- 16GB
A-DATA Technology DOVF1B163G2G 2GB
Patriot Memory (PDP Systems) PSD416G320081 16GB
Nanya Technology M2Y51264TU88B0B-3C 512MB
Mushkin 99[2/7/4]197F 8GB
Essencore Limited KD48GU88C-26N1600 8GB
Asgard VMA44UI-MEC1U2AW2 32GB
Kingston 99U5458-002.A00LF 2GB
Crucial Technology BLS8G4D240FSB.M16FBD 8GB
TwinMOS 8DHE3MN8-HATP 2GB
Samsung M471A4G43BB1-CWE 32GB
Report a bug
×
Bug description
Source link