RAM comparison G Skill Intl F3-1600C11-4GNS 4GB vs Hynix Semiconductor (Hyundai Electronics) HMT41GR7AFR8C-RD 8GB

G Skill Intl F3-1600C11-4GNS 4GB vs Hynix Semiconductor (Hyundai Electronics) HMT41GR7AFR8C-RD 8GB

Overall score

G Skill Intl F3-1600C11-4GNS 4GB

Overall score

Differences Specifications Comments

Reasons to consider
G Skill Intl F3-1600C11-4GNS 4GB

Reasons to consider
Hynix Semiconductor (Hyundai Electronics) HMT41GR7AFR8C-RD 8GB

Below the latency in the PassMark tests, ns

28 39

Around -39% lower latency
Faster write speed, GB/s

9.7 8.4

Average value in the tests
Higher memory bandwidth, mbps

14200 12800

Around 1.11 higher bandwidth

Complete list of technical specifications

G Skill Intl F3-1600C11-4GNS 4GB

Hynix Semiconductor (Hyundai Electronics) HMT41GR7AFR8C-RD 8GB

Main characteristics

Other

Description

PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 PC3-14200, 1.5V, CAS Supported: 6 7 8 9 10 11 13
Timings / Clock speed

9-9-9-24 / 1600 MHz no data
Ranking PassMark (The more the better)

2231 2650

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

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Absolute Latency

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RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

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