RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB
G Skill Intl F4-4400C18-8GTRG 8GB
Compare
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB vs G Skill Intl F4-4400C18-8GTRG 8GB
Overall score
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB
Overall score
G Skill Intl F4-4400C18-8GTRG 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB
Report a bug
Faster reading speed, GB/s
3
19
Average value in the tests
Reasons to consider
G Skill Intl F4-4400C18-8GTRG 8GB
Report a bug
Below the latency in the PassMark tests, ns
24
65
Around -171% lower latency
Faster write speed, GB/s
17.1
1,592.0
Average value in the tests
Higher memory bandwidth, mbps
17000
5300
Around 3.21 higher bandwidth
Specifications
Complete list of technical specifications
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB
G Skill Intl F4-4400C18-8GTRG 8GB
Main characteristics
Memory type
DDR2
DDR4
Latency in PassMark, ns
65
24
Read speed, GB/s
3,580.8
19.0
Write speed, GB/s
1,592.0
17.1
Memory bandwidth, mbps
5300
17000
Other
Description
PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5
PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
Timings / Clock speed
5-5-5-15 / 667 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
Ranking PassMark (The more the better)
572
4069
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB RAM comparisons
Samsung M471B5773DH0-CK0 2GB
Kingston 99U5295-011.A00LF 2GB
G Skill Intl F4-4400C18-8GTRG 8GB RAM comparisons
Samsung M395T2863QZ4-CF76 1GB
Golden Empire 1GB DDR2 800 CAS=4 1GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
AMD R5316G1609U2K 8GB
V-Color Technology Inc. TL48G30S816KRGB 8GB
Samsung M393B2G70BH0-CK0 16GB
G Skill Intl F4-2400C17-4GNT 4GB
G Skill Intl F5-6400J3239G16G 16GB
A-DATA Technology AO1P26KC8T1-BXFSHC 8GB
Kingston 9965516-049.A00LF 8GB
Hong Kong Hyunion Electronics DDR4 3200 2OZ 16GB
Kingston 9965525-018.A00LF 4GB
G Skill Intl F4-4266C19-8GTRG 8GB
Samsung M471B1G73QH0-YK0 8GB
Crucial Technology CT8G4DFS8213.C8FAD1 8GB
Kingston 9905403-174.A00LF 2GB
Shanghai Kuxin Microelectronics Ltd NMUD480E82-3000 8GB
A-DATA Technology AM2U16BC4P2-B05B 4GB
Avant Technology W641GU67J5213N8 8GB
Samsung M471B5173QH0-YK0 4GB
Avant Technology W6451U66J9266ND 4GB
SK Hynix HMT351U6CFR8C-H9 4GB
Crucial Technology BL16G32C16S4B.M8FB1 16GB
SK Hynix HMT351U6CFR8C-H9 4GB
Crucial Technology BL8G26C16U4W.8FD 8GB
Samsung M471B5173QH0-YK0 4GB
Patriot Memory (PDP Systems) PSD48G320081 8GB
Samsung DDR3 8GB 1600MHz 8GB
Crucial Technology CT8G4SFS8213.C8FBD1 8GB
A-DATA Technology DQVE1908 512MB
Heoriady M471A1K43CB1-CTD 8GB
Report a bug
×
Bug description
Source link