RAM comparison Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB vs Shanghai Kuxin Microelectronics Ltd NMUD416E82-3600 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB vs Shanghai Kuxin Microelectronics Ltd NMUD416E82-3600 16GB

Overall score

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Overall score

Differences Specifications Comments

Reasons to consider
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Reasons to consider
Shanghai Kuxin Microelectronics Ltd NMUD416E82-3600 16GB

Complete list of technical specifications

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Shanghai Kuxin Microelectronics Ltd NMUD416E82-3600 16GB

Main characteristics

Other

Description

PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
Timings / Clock speed

15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
Ranking PassMark (The more the better)

2925 3814

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

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Absolute Latency

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RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

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