RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Shanghai Kuxin Microelectronics Ltd NMUD480E82-3600 8GB
Compare
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB vs Shanghai Kuxin Microelectronics Ltd NMUD480E82-3600 8GB
Overall score
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Overall score
Shanghai Kuxin Microelectronics Ltd NMUD480E82-3600 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Report a bug
Reasons to consider
Shanghai Kuxin Microelectronics Ltd NMUD480E82-3600 8GB
Report a bug
Below the latency in the PassMark tests, ns
18
24
Around -33% lower latency
Faster reading speed, GB/s
20.4
16
Average value in the tests
Faster write speed, GB/s
18.1
12.5
Average value in the tests
Specifications
Complete list of technical specifications
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Shanghai Kuxin Microelectronics Ltd NMUD480E82-3600 8GB
Main characteristics
Memory type
DDR4
DDR4
Latency in PassMark, ns
24
18
Read speed, GB/s
16.0
20.4
Write speed, GB/s
12.5
18.1
Memory bandwidth, mbps
19200
19200
Other
Description
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
PC4-19200, 1.2V, CAS Supported: 11 12 13 14 15 16 17 18
Timings / Clock speed
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
Ranking PassMark (The more the better)
2925
3529
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB RAM comparisons
Corsair CMK64GX5M2B5200C40 32GB
Samsung M3 93T2950EZ3-CCC 1GB
Shanghai Kuxin Microelectronics Ltd NMUD480E82-3600 8GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Kingston 9905458-017.A01LF 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
G Skill Intl F3-2133C9-4GAB 4GB
Corsair CMU32GX4M4C3200C16 8GB
A-DATA Technology DOVF1B163G2G 2GB
Kingston 9905624-025.A00G 8GB
Corsair CMD8GX3M2A2933C12 4GB
G Skill Intl F4-3200C16-8GTZRX 8GB
Kingston 2GB-DDR2 800Mhz 2GB
Crucial Technology CT8G4DFS8213.C8FDD1 8GB
G Skill Intl F2-8500CL5-2GBPI 2GB
SK Hynix HMA82GR8AMR4N-TF 16GB
Qimonda 64T128020EDL2.5C2 1GB
Samsung M393A4K40BB2-CTD 32GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology CT8G4SFS8266.M8FB 8GB
AMD AE34G1601U1 4GB
Micron Technology 8ATF1G64AZ-2G3H1R 8GB
Kingston 9965525-010.A00LF 4GB
Panram International Corporation D4N2666PS-16G 16GB
SK Hynix HMT325U6CFR8C-PB 2GB
Corsair CMK16GX4M2E4000C19 8GB
A-DATA Technology AD73I1B1672EG 2GB
Corsair CMD32GX4M4B3200C16 8GB
Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
Crucial Technology CT16G4SFRA266.M16FRS 16GB
Samsung M393B1G70BH0-CK0 8GB
Kingston K821PJ-MIB 16GB
Ramaxel Technology RMR5040ED58E9W1600 4GB
SK Hynix HMA81GU6CJR8N-UH 8GB
Report a bug
×
Bug description
Source link