RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Micron Technology 18HTF12872AY-800F1 1GB
Samsung M471A4G43AB1-CWE 32GB
Compare
Micron Technology 18HTF12872AY-800F1 1GB vs Samsung M471A4G43AB1-CWE 32GB
Overall score
Micron Technology 18HTF12872AY-800F1 1GB
Overall score
Samsung M471A4G43AB1-CWE 32GB
Differences
Specifications
Comments
Differences
Reasons to consider
Micron Technology 18HTF12872AY-800F1 1GB
Report a bug
Faster reading speed, GB/s
4
15.6
Average value in the tests
Faster write speed, GB/s
2,107.0
12.8
Average value in the tests
Reasons to consider
Samsung M471A4G43AB1-CWE 32GB
Report a bug
Below the latency in the PassMark tests, ns
45
58
Around -29% lower latency
Higher memory bandwidth, mbps
25600
6400
Around 4 higher bandwidth
Specifications
Complete list of technical specifications
Micron Technology 18HTF12872AY-800F1 1GB
Samsung M471A4G43AB1-CWE 32GB
Main characteristics
Memory type
DDR2
DDR4
Latency in PassMark, ns
58
45
Read speed, GB/s
4,025.3
15.6
Write speed, GB/s
2,107.0
12.8
Memory bandwidth, mbps
6400
25600
Other
Description
PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6
PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24
Timings / Clock speed
5-5-5-15 / 800 MHz
20-20-20, 22-22-22, 24-24-24 / 3200 MHz
Ranking PassMark (The more the better)
670
2925
Micron Technology 18HTF12872AY-800F1 1GB RAM comparisons
Apacer Technology 78.0AGA0.9K5 1GB
GIGA - BYTE Technology Co Ltd GP-ARS16G44 8GB
Samsung M471A4G43AB1-CWE 32GB RAM comparisons
Corsair CMSX32GX4M2A3200C22 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Maxsun MSD416G26Q3 16GB
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8
Shanghai Kuxin Microelectronics Ltd NMUD416E82-3200 16G
A-DATA Technology DQVE1908 512MB
Gloway International Co. Ltd. WAR4U2666D19081C 8GB
Kingston 9905403-011.A03LF 2GB
G Skill Intl F4-3600C19-16GSXKB 16GB
TwinMOS 8DHE3MN8-HATP 2GB
Crucial Technology BLS16G4D240FSC.16FAD 16GB
Samsung M3 78T3354BZ0-CCC 256MB
Kingston 9905625-029.A00G 8GB
Crucial Technology CT51264BA1339.C16F 4GB
Shenzhen Xingmem Technology Corp CM4X8GF2666C1XMP 8GB
SK Hynix HYMP112U64CP8-S6 1GB
Samsung M474A1G43DB0-CPB 8GB
Samsung M393B1G70BH0-CK0 8GB
G Skill Intl F4-3200C16-8GIS 8GB
Crucial Technology BLS8G3N18AES4.16FE 8GB
Apacer Technology 78.CAGPE.AUF0B 8GB
SK Hynix HMT31GR7CFR4C-PB 8GB
Transcend Information JM2666HSB-16G 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Corsair CMV8GX4M1A2133C15 8GB
Kingston 99U5471-052.A00LF 8GB
Corsair CMG16GX4M2D3600C18 8GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
InnoDisk Corporation M4S0-4GSSNCIK 4GB
Report a bug
×
Bug description
Source link