RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Nanya Technology NT4GC64B8HG0NS-CG 4GB
Samsung V-GeN D4S4GL32A8TL 4GB
Compare
Nanya Technology NT4GC64B8HG0NS-CG 4GB vs Samsung V-GeN D4S4GL32A8TL 4GB
Overall score
Nanya Technology NT4GC64B8HG0NS-CG 4GB
Overall score
Samsung V-GeN D4S4GL32A8TL 4GB
Differences
Specifications
Comments
Differences
Reasons to consider
Nanya Technology NT4GC64B8HG0NS-CG 4GB
Report a bug
Below the latency in the PassMark tests, ns
42
58
Around 28% lower latency
Reasons to consider
Samsung V-GeN D4S4GL32A8TL 4GB
Report a bug
Faster reading speed, GB/s
18.5
9.7
Average value in the tests
Faster write speed, GB/s
9.5
6.0
Average value in the tests
Higher memory bandwidth, mbps
19200
10600
Around 1.81 higher bandwidth
Specifications
Complete list of technical specifications
Nanya Technology NT4GC64B8HG0NS-CG 4GB
Samsung V-GeN D4S4GL32A8TL 4GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
42
58
Read speed, GB/s
9.7
18.5
Write speed, GB/s
6.0
9.5
Memory bandwidth, mbps
10600
19200
Other
Description
PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
Timings / Clock speed
7-7-7-20 / 1333 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
Ranking PassMark (The more the better)
1396
1998
Nanya Technology NT4GC64B8HG0NS-CG 4GB RAM comparisons
Corsair CMY8GX3M2A2666C10 4GB
Corsair CMSO4GX3M1A1333C9 4GB
Samsung V-GeN D4S4GL32A8TL 4GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Kingston 99U5403-036.A00G 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Avant Technology F641GU67F9333G 8GB
Chun Well Technology Holding Limited D4U0832161B 8GB
Patriot Memory (PDP Systems) PSD22G8002 2GB
Crucial Technology CT8G4SFD8213.C16FDD2 8GB
Apacer Technology 78.01GA0.9K5 1GB
Patriot Memory (PDP Systems) 2400 C17 8GB
Kingston KHX1600C9D3/8G 8GB
Mushkin MRA4S320GJJM32G 32GB
Samsung M386B4G70DM0-CMA4 32GB
Avant Technology J642GU42J7240NF 16GB
AMD AE34G1601U1 4GB
Shenzhen Micro Innovation Industry KF3200DDCD4 16GB
Kingston MSI16D3LS1MNG/8G 8GB
Samsung M471A1K43CB1-CRC 8GB
G Skill Intl F4-4000C14-16GTZR 16GB
Hynix Semiconductor (Hyundai Electronics) HMA82GU6AFR8N
Samsung M471B5173DB0-YK0 4GB
G Skill Intl F4-2133C15-16GVR 16GB
SK Hynix HMT325U6CFR8C-PB 2GB
G Skill Intl F4-2800C17-8GVR 8GB
G Skill Intl F3-1333C9-4GIS 4GB
Gloway International Co. Ltd. TYA4U2400D17081C 8GB
Samsung DDR3 8GB 1600MHz 8GB
Kingston 9905713-028.A00G 8GB
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Crucial Technology BLS4G4D240FSB.8FBD2 4GB
Samsung M471B5673FH0-CF8 2GB
Samsung M471A2K43EB1-CWE 16GB
Report a bug
×
Bug description
Source link