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PNY Electronics PNY 2GB
InnoDisk Corporation 16GB
Compare
PNY Electronics PNY 2GB vs InnoDisk Corporation 16GB
Overall score
PNY Electronics PNY 2GB
Overall score
InnoDisk Corporation 16GB
Differences
Specifications
Comments
Differences
Reasons to consider
PNY Electronics PNY 2GB
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Below the latency in the PassMark tests, ns
27
38
Around 29% lower latency
Faster reading speed, GB/s
13.8
7.7
Average value in the tests
Faster write speed, GB/s
8.4
8.2
Average value in the tests
Reasons to consider
InnoDisk Corporation 16GB
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Higher memory bandwidth, mbps
17000
10600
Around 1.6 higher bandwidth
Specifications
Complete list of technical specifications
PNY Electronics PNY 2GB
InnoDisk Corporation 16GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
27
38
Read speed, GB/s
13.8
7.7
Write speed, GB/s
8.4
8.2
Memory bandwidth, mbps
10600
17000
Other
Description
PC3-10600, 1.5V, CAS Supported: 6 8 9
PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
Timings / Clock speed
7-7-7-20 / 1333 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
Ranking PassMark (The more the better)
2274
2163
PNY Electronics PNY 2GB RAM comparisons
Kingston 9965426-130.A00LF 4GB
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InnoDisk Corporation 16GB RAM comparisons
Crucial Technology BLS4G4D240FSE.8FBD 4GB
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RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
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Absolute Latency
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RAM 2
CAS Latency (CL) *
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Absolute Latency
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