RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Samsung 1600 CL10 Series 8GB
G Skill Intl F4-3200C14-16GTZ 16GB
Compare
Samsung 1600 CL10 Series 8GB vs G Skill Intl F4-3200C14-16GTZ 16GB
Overall score
Samsung 1600 CL10 Series 8GB
Overall score
G Skill Intl F4-3200C14-16GTZ 16GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung 1600 CL10 Series 8GB
Report a bug
Below the latency in the PassMark tests, ns
25
30
Around 17% lower latency
Reasons to consider
G Skill Intl F4-3200C14-16GTZ 16GB
Report a bug
Faster reading speed, GB/s
17.7
16.1
Average value in the tests
Faster write speed, GB/s
15.0
10.1
Average value in the tests
Higher memory bandwidth, mbps
17000
12800
Around 1.33 higher bandwidth
Specifications
Complete list of technical specifications
Samsung 1600 CL10 Series 8GB
G Skill Intl F4-3200C14-16GTZ 16GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
25
30
Read speed, GB/s
16.1
17.7
Write speed, GB/s
10.1
15.0
Memory bandwidth, mbps
12800
17000
Other
Description
PC3-12800, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10 11
PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
Timings / Clock speed
9-9-9-24 / 1600 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
Ranking PassMark (The more the better)
2764
3593
Samsung 1600 CL10 Series 8GB RAM comparisons
G Skill Intl F3-14900CL10-8GBXL 8GB
Samsung 1600 CL10 Series 8GB
G Skill Intl F4-3200C14-16GTZ 16GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Patriot Memory (PDP Systems) PSD34G16002 4GB
G Skill Intl F4-3200C16-8GVSB 8GB
Samsung M471B5273EB0-CK0 4GB
Patriot Memory (PDP Systems) PSD48G24002 8GB
Kingston ACR512X64D3S13C9G 4GB
Corsair CMD16GX4M4B3000C14 4GB
SK Hynix HMT351U6CFR8C-H9 4GB
G Skill Intl F4-4266C19-8GTZR 8GB
Kingston 99U5584-004.A00LF 4GB
A-DATA Technology DDR4 2133 2OZ 8GB
SK Hynix HMT325U6CFR8C-PB 2GB
G Skill Intl F4-3466C16-8GVR 8GB
Kingston KVR16N11/8-SP 8GB
Crucial Technology CT32G4SFD8266.C16FB 32GB
SK Hynix HMT31GR7BFR4C-H9 8GB
G Skill Intl F4-3200C16-16GRS 16GB
Kingston ACR256X64D3S1333C9 2GB
Corsair CMD16GX4M4B3200C14 4GB
SK Hynix HMT425S6CFR6A-PB 2GB
Samsung M47472K43DB1-CTD 16GB
Hexon Technology Pte Ltd HEXON 1GB
Shenzhen Xingmem Technology Corp S949B2UUH-ITR 8GB
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Corsair CMWX8GF2933Z19W8 8GB
Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A
Crucial Technology BL8G30C15U4B.M8FE1 8GB
G Skill Intl F3-14900CL8-4GBXM 4GB
Corsair CMT32GX4M2K4000C19 16GB
Report a bug
×
Bug description
Source link