RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Samsung M3 78T2863EHS-CF7 1GB
Gloway International (HK) STK4U2400D17161C 16GB
Compare
Samsung M3 78T2863EHS-CF7 1GB vs Gloway International (HK) STK4U2400D17161C 16GB
Overall score
Samsung M3 78T2863EHS-CF7 1GB
Overall score
Gloway International (HK) STK4U2400D17161C 16GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M3 78T2863EHS-CF7 1GB
Report a bug
Below the latency in the PassMark tests, ns
59
67
Around 12% lower latency
Faster reading speed, GB/s
4
15.3
Average value in the tests
Reasons to consider
Gloway International (HK) STK4U2400D17161C 16GB
Report a bug
Faster write speed, GB/s
8.2
2,123.3
Average value in the tests
Higher memory bandwidth, mbps
19200
6400
Around 3 higher bandwidth
Specifications
Complete list of technical specifications
Samsung M3 78T2863EHS-CF7 1GB
Gloway International (HK) STK4U2400D17161C 16GB
Main characteristics
Memory type
DDR2
DDR4
Latency in PassMark, ns
59
67
Read speed, GB/s
4,833.8
15.3
Write speed, GB/s
2,123.3
8.2
Memory bandwidth, mbps
6400
19200
Other
Description
PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
Timings / Clock speed
5-5-5-15 / 800 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
Ranking PassMark (The more the better)
731
2042
Samsung M3 78T2863EHS-CF7 1GB RAM comparisons
Samsung M3 78T2863QZS-CE6 1GB
Crucial Technology BLS8G4D240FSE.M16FAD 8GB
Gloway International (HK) STK4U2400D17161C 16GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
TwinMOS 8DPT5MK8-TATP 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Kllisre 8GB
Patriot Memory (PDP Systems) 2400 C14 Series 8GB
A-DATA Technology DQVE1908 512MB
Micron Technology 18ASF1G72PDZ-2G1B1 8GB
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
Corsair CM4X8GD3000C16K4D 8GB
A-DATA Technology VDQVE1B16 2GB
Apacer Technology 78.C2GFP.C700B 8GB
SK Hynix HMT351S6BFR8C-H9 4GB
SK Hynix HMT351S6CFR8C-PB 4GB
A-DATA Technology DQVE1908 512MB
Corsair CMD32GX4M4B2133C10 8GB
Samsung M378B5773DH0-CH9 2GB
Crucial Technology BL32G32C16S4B.16FB 32GB
A-DATA Technology AD5U48008G-B 8GB
Corsair CMSX32GX4M2A2933C19 16GB
A-DATA Technology DQKD1A08 1GB
Apacer Technology 78.B1GM3.C7W0B 4GB
G Skill Intl F3-10600CL9-2GBNT 2GB
G Skill Intl F4-3333C16-16GTZR 16GB
A-DATA Technology AO2P32NC8W1-BD3SHC 8GB
Apacer Technology GD2.1527WC.001 8GB
A-DATA Technology DDR3 1866 2OZ 4GB
Crucial Technology CT4G4SFS824A.M8FE 4GB
SK Hynix HMT351S6CFR8C-PB 4GB
G Skill Intl F4-3300C16-16GTZSW 16GB
Nanya Technology M2F4G64CB8HB9N-CG 4GB
Kingston KF2666C16D4/16G 16GB
Report a bug
×
Bug description
Source link