Samsung M3 78T2953EZ3-CF7 1GB vs InnoDisk Corporation M4S0-4GSSNCSJ 4GB

Overall score

Samsung M3 78T2953EZ3-CF7 1GB

Samsung M3 78T2953EZ3-CF7 1GB

Overall score

InnoDisk Corporation M4S0-4GSSNCSJ 4GB

InnoDisk Corporation M4S0-4GSSNCSJ 4GB

Differences Specifications Comments

Differences

Samsung M3 78T2953EZ3-CF7 1GB

Reasons to consider
Samsung M3 78T2953EZ3-CF7 1GB

Below the latency in the PassMark tests, ns

58 86

Around 33% lower latency
Faster reading speed, GB/s

4 12.1

Average value in the tests

InnoDisk Corporation M4S0-4GSSNCSJ 4GB

Reasons to consider
InnoDisk Corporation M4S0-4GSSNCSJ 4GB

Faster write speed, GB/s

5.7 1,950.7

Average value in the tests
Higher memory bandwidth, mbps

19200 6400

Around 3 higher bandwidth

Specifications

Complete list of technical specifications

Samsung M3 78T2953EZ3-CF7 1GB

InnoDisk Corporation M4S0-4GSSNCSJ 4GB

Main characteristics

Memory type

DDR2 DDR4
Latency in PassMark, ns

58 86
Read speed, GB/s

4,241.0 12.1
Write speed, GB/s

1,950.7 5.7
Memory bandwidth, mbps

6400 19200

Other

Description

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
Timings / Clock speed

5-5-5-15 / 800 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
Ranking PassMark (The more the better)

651 1220

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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