RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Samsung M3 78T2953EZ3-CF7 1GB
Panram International Corporation W4N2400PS-8G 8GB
Compare
Samsung M3 78T2953EZ3-CF7 1GB vs Panram International Corporation W4N2400PS-8G 8GB
Overall score
Samsung M3 78T2953EZ3-CF7 1GB
Overall score
Panram International Corporation W4N2400PS-8G 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M3 78T2953EZ3-CF7 1GB
Report a bug
Faster reading speed, GB/s
4
16.6
Average value in the tests
Reasons to consider
Panram International Corporation W4N2400PS-8G 8GB
Report a bug
Below the latency in the PassMark tests, ns
23
58
Around -152% lower latency
Faster write speed, GB/s
12.9
1,950.7
Average value in the tests
Higher memory bandwidth, mbps
19200
6400
Around 3 higher bandwidth
Specifications
Complete list of technical specifications
Samsung M3 78T2953EZ3-CF7 1GB
Panram International Corporation W4N2400PS-8G 8GB
Main characteristics
Memory type
DDR2
DDR4
Latency in PassMark, ns
58
23
Read speed, GB/s
4,241.0
16.6
Write speed, GB/s
1,950.7
12.9
Memory bandwidth, mbps
6400
19200
Other
Description
PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
Timings / Clock speed
5-5-5-15 / 800 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
Ranking PassMark (The more the better)
651
2825
Samsung M3 78T2953EZ3-CF7 1GB RAM comparisons
Corsair VS1GB800D2 1GB
Kingston KVR800D2N6/2G 2GB
Panram International Corporation W4N2400PS-8G 8GB RAM comparisons
Kingston 99U5403-036.A00G 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
SK Hynix HMT325U6CFR8C-PB 2GB
Mushkin MRA4S320GJJM32G 32GB
Apacer Technology 78.A1GC6.9H10C 2GB
Micron Technology AFLD44EK2P 4GB
PNY Electronics PNY 2GB
Micron Technology 8ATF2G64HZ-3G2E2 16GB
A-DATA Technology VDQVE1B16 2GB
Samsung M471A5143DB0-CPB 4GB
AMD AE34G1601U1 4GB
G Skill Intl F4-3600C17-8GTRS 8GB
Corsair CML8GX3M2A1600C9 4GB
Corsair CMR16GX4M2D3000C16 8GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Micron Technology 9ASF1G72PZ-2G9E1 8GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology CT8G4SFD8213.C16FBR2 8GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Avant Technology J641GU49J2320NE 8GB
Kingston 9905471-006.A01LF 4GB
Shanghai Kuxin Microelectronics Ltd NMSO416E82-2400E 16
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Kingston KHX2933C17S4/16G 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Corsair CMR32GX4M2D3000C16 16GB
Kingston 99U5428-101.A00LF 8GB
Kingston 99U5665-001.A00G 4GB
Corsair CMZ16GX3M2A2400C10 8GB
Micron Technology 18ASF1G72PZ-2G1A2 8GB
Report a bug
×
Bug description
Source link