RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Samsung M378T5663QZ3-CF7 2GB
Micron Technology 72ASS8G72LZ-2G6D2 64GB
Compare
Samsung M378T5663QZ3-CF7 2GB vs Micron Technology 72ASS8G72LZ-2G6D2 64GB
Overall score
Samsung M378T5663QZ3-CF7 2GB
Overall score
Micron Technology 72ASS8G72LZ-2G6D2 64GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M378T5663QZ3-CF7 2GB
Report a bug
Reasons to consider
Micron Technology 72ASS8G72LZ-2G6D2 64GB
Report a bug
Below the latency in the PassMark tests, ns
38
56
Around -47% lower latency
Faster reading speed, GB/s
8.7
4
Average value in the tests
Faster write speed, GB/s
7.0
1,813.5
Average value in the tests
Higher memory bandwidth, mbps
21300
6400
Around 3.33 higher bandwidth
Specifications
Complete list of technical specifications
Samsung M378T5663QZ3-CF7 2GB
Micron Technology 72ASS8G72LZ-2G6D2 64GB
Main characteristics
Memory type
DDR2
DDR4
Latency in PassMark, ns
56
38
Read speed, GB/s
4,387.7
8.7
Write speed, GB/s
1,813.5
7.0
Memory bandwidth, mbps
6400
21300
Other
Description
PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
Timings / Clock speed
5-5-5-15 / 800 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
Ranking PassMark (The more the better)
693
1999
Samsung M378T5663QZ3-CF7 2GB RAM comparisons
Kingston 2GB-DDR2 800Mhz 2GB
TwinMOS 8D7T5MK8-TATP 2GB
Micron Technology 72ASS8G72LZ-2G6D2 64GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Apacer Technology GD2.2229BH.001 16GB
Elpida EBJ40EG8BFWB-JS-F 4GB
EXCELERAM D4168G8HHSS9CJRB21 16GB
Samsung M395T2863QZ4-CF76 1GB
Gloway International (HK) STK4U2400D17082C 8GB
Lexar Co Limited LD4AU016G-H3200GST 16GB
Crucial Technology BLT8G4D32AET4K.M8FE1 8GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Patriot Memory (PDP Systems) PSD44G240081 4GB
Kingston KHX2133C11D3/4GX 4GB
Corsair CMW16GX4M2D3600C16 8GB
Samsung M378A1K43EB2-CWE 8GB
Kingston KF3200C16D4/32GX 32GB
Samsung M3 78T2863QZS-CF7 1GB
Corsair CM4X8GF3000C15K4 8GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Samsung M471A1G43EB1-CRC 8GB
Kingston KVT8FP-HYC 4GB
Micron Technology 8ATF2G64HZ-3G2E2 16GB
Kingston 9905471-002.A00LF 2GB
Corsair CMK16GX4M2B3733C17 8GB
AMD AE34G1601U1 4GB
Wilk Elektronik S.A. IRP4000D4V64L18S/8G 8GB
A-DATA Technology DDR2 800G 2GB
Corsair CM4X4GF3000C15K4 4GB
Samsung M378B5673EH1-CF8 2GB
Corsair CMT16GX4M2K4266C19 8GB
Report a bug
×
Bug description
Source link