RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Samsung M471B1G73QH0-YK0 8GB
Avexir Technologies Corporation DDR4-2400 8GB CL16 8GB
Compare
Samsung M471B1G73QH0-YK0 8GB vs Avexir Technologies Corporation DDR4-2400 8GB CL16 8GB
Overall score
Samsung M471B1G73QH0-YK0 8GB
Overall score
Avexir Technologies Corporation DDR4-2400 8GB CL16 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M471B1G73QH0-YK0 8GB
Report a bug
Reasons to consider
Avexir Technologies Corporation DDR4-2400 8GB CL16 8GB
Report a bug
Below the latency in the PassMark tests, ns
26
47
Around -81% lower latency
Faster reading speed, GB/s
14.6
11.8
Average value in the tests
Faster write speed, GB/s
11.8
8.0
Average value in the tests
Higher memory bandwidth, mbps
19200
12800
Around 1.5 higher bandwidth
Specifications
Complete list of technical specifications
Samsung M471B1G73QH0-YK0 8GB
Avexir Technologies Corporation DDR4-2400 8GB CL16 8GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
47
26
Read speed, GB/s
11.8
14.6
Write speed, GB/s
8.0
11.8
Memory bandwidth, mbps
12800
19200
Other
Description
PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11
PC4-19200, 1.2V, CAS Supported: 11 12 13 14 15 16 18
Timings / Clock speed
9-9-9-24 / 1600 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
Ranking PassMark (The more the better)
2061
3124
Samsung M471B1G73QH0-YK0 8GB RAM comparisons
Crucial Technology CT102464BF160B.C16 8GB
Crucial Technology CT102464BF160B.M16 8GB
Avexir Technologies Corporation DDR4-2400 8GB CL16 8GB RAM comparisons
Samsung M395T2863QZ4-CF76 1GB
Samsung M471B5273CH0-CH9 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
G Skill Intl F3-10600CL9-2GBNT 2GB
G Skill Intl F4-3200C14-8GFX 8GB
Samsung M3 78T5663RZ3-CF7 2GB
G Skill Intl F4-3200C15-8GTZ 8GB
Samsung M378A5244CB0-CTD 4GB
Micron Technology 36ASF4G72LZ-2G3A1 32GB
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
G Skill Intl F4-3466C16-16GTZR 16GB
A-DATA Technology VDQVE1B16 2GB
Kingston KHX3300C16D4/4GX 4GB
Nanya Technology M2Y51264TU88B0B-3C 512MB
Kingston 9905624-051.A00G 8GB
PUSKILL DDR3 1600 8G 8GB
Micron Technology 4ATF1G64HZ-3G2E2 8GB
Nanya Technology NT2GT64U8HD0BN-AD 2GB
Crucial Technology CT16G4SFD824A.M16FA 16GB
A-DATA Technology AD73I1B1672EG 2GB
Maxsun MSD48G30M3 8GB
Corsair CML8GX3M2A1866C9 4GB
Samsung M393A2G40EB2-CTD 16GB
Protocol Engines Kingrock 800 2GB 2GB
Patriot Memory (PDP Systems) PSD44G213381 4GB
A-DATA Technology VDQVE1B16 2GB
Shanghai Kuxin Microelectronics Ltd NMUD480E82-2666 8GB
A-DATA Technology DOVF1B163G2G 2GB
Kingston KHX2666C16D4/32GX 32GB
SK Hynix HMT425S6CFR6A-PB 2GB
Crucial Technology BLS8G4S26BFSDK.8FBD 8GB
Report a bug
×
Bug description
Source link