Crucial Technology RM51264BA1339.16FR 4GB vs Crucial Technology CT16G4SFD8266.M16FE 16GB

总分

Crucial Technology RM51264BA1339.16FR 4GB

Crucial Technology RM51264BA1339.16FR 4GB

总分

Crucial Technology CT16G4SFD8266.M16FE 16GB

Crucial Technology CT16G4SFD8266.M16FE 16GB

差异规格评论

差异

Crucial Technology RM51264BA1339.16FR 4GB

需要考虑的原因
Crucial Technology RM51264BA1339.16FR 4GB

报告一个错误

低于PassMark测试中的延时，ns

26 37

左右 30% 更低的延时

Crucial Technology CT16G4SFD8266.M16FE 16GB

需要考虑的原因
Crucial Technology CT16G4SFD8266.M16FE 16GB

报告一个错误

更快的读取速度，GB/s

15.2 12.3

测试中的平均数值
更快的写入速度，GB/s

12.4 7.4

测试中的平均数值
更高的内存带宽，mbps

21300 10600

左右 2.01 更高的带宽

规格

完整的技术规格清单

Crucial Technology RM51264BA1339.16FR 4GB

Crucial Technology CT16G4SFD8266.M16FE 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

26 37
读取速度，GB/s

12.3 15.2
写入速度，GB/s

7.4 12.4
内存带宽，mbps

10600 21300

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 8 9 PC4-21300, 1.2V, CAS Supported: 10 12 13 14 15 16 17 18 19 20
时序/时钟速度

7-7-7-20 / 1333 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2078 2863

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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SK Hynix HMA82GR8AMR4N-TF 16GB

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Crucial Technology RM51264BA1339.16FR 4GB

Crucial Technology RM51264BA1339.16FR 4GB

Crucial Technology CT16G4SFD8266.M16FE 16GB

Crucial Technology CT16G4SFD8266.M16FE 16GB

Corsair CM2X1024-6400C4 1GB

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Smart Modular SH564128FH8NZQNSCG 4GB

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Century Micro Inc. CENTURY JAPAN MEMORY 8GB

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Corsair CM2X1024-8500C5D 1GB

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G Skill Intl F4-3600C14-16GVKA 16GB

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Kingston 9905458-017.A01LF 4GB

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Crucial Technology CT8G4SFS8266.C8FJ 8GB

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Samsung M3 78T3354BZ0-CCC 256MB

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Crucial Technology CT8G4DFD8213.C16FBD2 8GB

AMD R5S38G1601U2S 8GB

AMD R5S38G1601U2S 8GB

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Crucial Technology CT8G4DFS824A.C8FBR1 8GB

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Kingston K531R8-MIN 4GB

Crucial Technology CT8G4DFRA266.C8FP 8GB

Crucial Technology CT8G4DFRA266.C8FP 8GB