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G Skill Intl F3-10600CL9-2GBNT 2GB
V-GEN D4H4GL26A8TS5 4GB

G Skill Intl F3-10600CL9-2GBNT 2GB vs V-GEN D4H4GL26A8TS5 4GB

总分
star star star star star
G Skill Intl F3-10600CL9-2GBNT 2GB

G Skill Intl F3-10600CL9-2GBNT 2GB

总分
star star star star star
V-GEN D4H4GL26A8TS5 4GB

V-GEN D4H4GL26A8TS5 4GB

差异 规格 评论

差异

G Skill Intl F3-10600CL9-2GBNT 2GB 需要考虑的原因
G Skill Intl F3-10600CL9-2GBNT 2GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    26 left arrow 67
    左右 61% 更低的延时
  • 更快的写入速度，GB/s
    8.4 left arrow 8.3
    测试中的平均数值
V-GEN D4H4GL26A8TS5 4GB 需要考虑的原因
V-GEN D4H4GL26A8TS5 4GB
报告一个错误
  • 更快的读取速度，GB/s
    16.2 left arrow 13.2
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 10600
    左右 1.81 更高的带宽

规格

完整的技术规格清单
G Skill Intl F3-10600CL9-2GBNT 2GB
V-GEN D4H4GL26A8TS5 4GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    26 left arrow 67
  • 读取速度，GB/s
    13.2 left arrow 16.2
  • 写入速度，GB/s
    8.4 left arrow 8.3
  • 内存带宽，mbps
    10600 left arrow 19200
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 6 7 8 9 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    2070 left arrow 1798

G Skill Intl F3-10600CL9-2GBNT 2GB RAM的比较

A-DATA Technology DDR3L 1600G 4GB
Crucial Technology B|B8G4D30BET4K.C8FD 8GB

V-GEN D4H4GL26A8TS5 4GB RAM的比较

Apacer Technology AQD-D4U8GN24-SE 8GB
Nanya Technology M2F8G64CB8HC9N-DI 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

G Skill Intl F3-10600CL9-2GBNT 2GB
G Skill Intl F3-10600CL9-2GBNT 2GB
V-GEN D4H4GL26A8TS5 4GB
V-GEN D4H4GL26A8TS5 4GB
内存RAM
TwinMOS 8DHE3MN8-HATP 2GB
TwinMOS 8DHE3MN8-HATP 2GB
Micron Technology 16ATF4G64HZ-3G2B2 32GB
Micron Technology 16ATF4G64HZ-3G2B2 32GB
内存RAM
Hexon Technology Pte Ltd HEXON 1GB
Hexon Technology Pte Ltd HEXON 1GB
Crucial Technology BL8G26C16U4R.8FD 8GB
Crucial Technology BL8G26C16U4R.8FD 8GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Micron Technology 16G3200CL22 16GB
Micron Technology 16G3200CL22 16GB
内存RAM
Samsung M395T2863QZ4-CF76 1GB
Samsung M395T2863QZ4-CF76 1GB
Kingston 9905700-017.A00G 8GB
Kingston 9905700-017.A00G 8GB
内存RAM
Kingston 99P5474-014.A00LF 4GB
Kingston 99P5474-014.A00LF 4GB
Corsair CMK192GX4M12P3200C16 16GB
Corsair CMK192GX4M12P3200C16 16GB
内存RAM
G Skill Intl F5-6400J3239G16G 16GB
G Skill Intl F5-6400J3239G16G 16GB
Samsung M471A2K43BB1-CTD 16GB
Samsung M471A2K43BB1-CTD 16GB
内存RAM
Samsung M393B1K70CH0-CH9 8GB
Samsung M393B1K70CH0-CH9 8GB
SK Hynix HMAA1GU6CJR6N-XN 8GB
SK Hynix HMAA1GU6CJR6N-XN 8GB
内存RAM
Samsung M393B5170FH0-CK0 4GB
Samsung M393B5170FH0-CK0 4GB
Corsair CMSX32GX4M2A2400C16 16GB
Corsair CMSX32GX4M2A2400C16 16GB
内存RAM
Samsung M395T2863QZ4-CF76 1GB
Samsung M395T2863QZ4-CF76 1GB
HT Micron HTH5AN8G8NCJR-VKD 8GB
HT Micron HTH5AN8G8NCJR-VKD 8GB
内存RAM
Samsung M378B5773CH0-CH9 2GB
Samsung M378B5773CH0-CH9 2GB
Transcend Information TS1GSH64V4B 8GB
Transcend Information TS1GSH64V4B 8GB
内存RAM
Kingston 9905403-156.A00LF 2GB
Kingston 9905403-156.A00LF 2GB
Corsair CMR32GX4M4C3466C16 8GB
Corsair CMR32GX4M4C3466C16 8GB
内存RAM
Samsung M393B2G70BH0-CK0 16GB
Samsung M393B2G70BH0-CK0 16GB
G Skill Intl F4-4266C16-8GTZR 8GB
G Skill Intl F4-4266C16-8GTZR 8GB
内存RAM
Corsair CMZ16GX3M2A2400C10 8GB
Corsair CMZ16GX3M2A2400C10 8GB
Avexir Technologies Corporation DDR4-3000 CL16 4GB 4GB
Avexir Technologies Corporation DDR4-3000 CL16 4GB 4GB
内存RAM