Kingston ACR512X64D3S13C9G 4GB vs EXCELERAM D4168G8HHSS9CJRB21 16GB

总分

Kingston ACR512X64D3S13C9G 4GB

Kingston ACR512X64D3S13C9G 4GB

总分

EXCELERAM D4168G8HHSS9CJRB21 16GB

EXCELERAM D4168G8HHSS9CJRB21 16GB

差异规格评论

差异

Kingston ACR512X64D3S13C9G 4GB

需要考虑的原因
Kingston ACR512X64D3S13C9G 4GB

报告一个错误

低于PassMark测试中的延时，ns

27 89

左右 70% 更低的延时
更快的写入速度，GB/s

8.5 7.1

测试中的平均数值

EXCELERAM D4168G8HHSS9CJRB21 16GB

需要考虑的原因
EXCELERAM D4168G8HHSS9CJRB21 16GB

报告一个错误

更快的读取速度，GB/s

14.2 11.5

测试中的平均数值
更高的内存带宽，mbps

21300 10600

左右 2.01 更高的带宽

规格

完整的技术规格清单

Kingston ACR512X64D3S13C9G 4GB

EXCELERAM D4168G8HHSS9CJRB21 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

27 89
读取速度，GB/s

11.5 14.2
写入速度，GB/s

8.5 7.1
内存带宽，mbps

10600 21300

Other

描述

PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23
时序/时钟速度

7-7-7-20 / 1333 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

1756 1571

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Kingston ACR512X64D3S13C9G 4GB

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EXCELERAM D4168G8HHSS9CJRB21 16GB

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STEC (Silicon Tech) S1024R3NN2QK-I 1GB

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Samsung M393A8K40B21-CTC 64GB

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Samsung M4 70T2864QZ3-CF7 1GB

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Team Group Inc. TEAMGROUP-Ind-2666 8GB

Team Group Inc. TEAMGROUP-Ind-2666 8GB