Micron Technology 16JSF25664HZ-1G1F1 2GB vs Kingston KHX2800C14D4/4GX 4GB

总分

Micron Technology 16JSF25664HZ-1G1F1 2GB

Micron Technology 16JSF25664HZ-1G1F1 2GB

总分

Kingston KHX2800C14D4/4GX 4GB

Kingston KHX2800C14D4/4GX 4GB

差异规格评论

差异

Micron Technology 16JSF25664HZ-1G1F1 2GB

需要考虑的原因
Micron Technology 16JSF25664HZ-1G1F1 2GB

报告一个错误

低于PassMark测试中的延时，ns

29 30

左右 3% 更低的延时

Kingston KHX2800C14D4/4GX 4GB

需要考虑的原因
Kingston KHX2800C14D4/4GX 4GB

报告一个错误

更快的读取速度，GB/s

16.8 10.5

测试中的平均数值
更快的写入速度，GB/s

13.2 7.1

测试中的平均数值
更高的内存带宽，mbps

17000 8500

左右 2 更高的带宽

规格

完整的技术规格清单

Micron Technology 16JSF25664HZ-1G1F1 2GB

Kingston KHX2800C14D4/4GX 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

29 30
读取速度，GB/s

10.5 16.8
写入速度，GB/s

7.1 13.2
内存带宽，mbps

8500 17000

Other

描述

PC3-8500, 1.5V, CAS Supported: 5 6 7 8 PC4-17000, 1.2V, CAS Supported: 8 13 18 23 29 34 35 36 37 38
时序/时钟速度

7-7-7-20 / 1066 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

1425 2996

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Avant Technology W641GU42J7240NB 8GB

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Samsung M393B2G70BH0-CH9 16GB

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Kingston 9905702-012.A00G 8GB

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Crucial Technology BLS4G4D240FSE.8FBD 4GB

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Corsair CMW32GX4M4Z3200C16 8GB

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Kingston 99U5474-013.A00LF 2GB

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Crucial Technology BLS8G4D26BFSBK.8FD 8GB