Samsung M471A5244CB0-CWE 4GB vs Crucial Technology BLS8G4D32AESBK.M8FE 8GB

总分

Samsung M471A5244CB0-CWE 4GB

Samsung M471A5244CB0-CWE 4GB

总分

Crucial Technology BLS8G4D32AESBK.M8FE 8GB

Crucial Technology BLS8G4D32AESBK.M8FE 8GB

差异规格评论

差异

Samsung M471A5244CB0-CWE 4GB

需要考虑的原因
Samsung M471A5244CB0-CWE 4GB

报告一个错误

更高的内存带宽，mbps

25600 19200

左右 1.33% 更高的带宽

Crucial Technology BLS8G4D32AESBK.M8FE 8GB

需要考虑的原因
Crucial Technology BLS8G4D32AESBK.M8FE 8GB

报告一个错误

低于PassMark测试中的延时，ns

27 38

左右 -41% 更低的延时
更快的读取速度，GB/s

18.1 15.5

测试中的平均数值
更快的写入速度，GB/s

14.6 12.0

测试中的平均数值

规格

完整的技术规格清单

Samsung M471A5244CB0-CWE 4GB

Crucial Technology BLS8G4D32AESBK.M8FE 8GB

主要特点

存储器类型

DDR4 DDR4
PassMark中的延时，ns

38 27
读取速度，GB/s

15.5 18.1
写入速度，GB/s

12.0 14.6
内存带宽，mbps

25600 19200

Other

描述

PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24 PC4-19200, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
时序/时钟速度

20-20-20, 22-22-22, 24-24-24 / 3200 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2283 3446

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Samsung M471A1G44AB0-CWE 8GB

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SK Hynix HMT351S6BFR8C-H9 4GB

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Samsung M471A5644EB0-CPB 2GB

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Ramaxel Technology RMR5040ED58E9W1600 4GB

G Skill Intl F4-4000C18-32GTZN 32GB

G Skill Intl F4-4000C18-32GTZN 32GB

Samsung M471A1K43DB1-CTD 8GB

Samsung M471A1K43DB1-CTD 8GB

Crucial Technology CT8G4DFS8213.M8FB 8GB

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TwinMOS 8DHE3MN8-HATP 2GB

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Kingmax Semiconductor FLFE85F-C8KL9 2GB

Kingmax Semiconductor FLFE85F-C8KL9 2GB

Kingston 9905713-035.A00G 8GB

Kingston 9905713-035.A00G 8GB