takeMS International AG TMS2GB264D082-805G 2GB vs Crucial Technology BLS8G4D26BFSCK.8FBD 8GB

总分

takeMS International AG TMS2GB264D082-805G 2GB

takeMS International AG TMS2GB264D082-805G 2GB

总分

Crucial Technology BLS8G4D26BFSCK.8FBD 8GB

Crucial Technology BLS8G4D26BFSCK.8FBD 8GB

差异规格评论

差异

takeMS International AG TMS2GB264D082-805G 2GB

需要考虑的原因
takeMS International AG TMS2GB264D082-805G 2GB

报告一个错误

更快的读取速度，GB/s

5 17.5

测试中的平均数值

Crucial Technology BLS8G4D26BFSCK.8FBD 8GB

需要考虑的原因
Crucial Technology BLS8G4D26BFSCK.8FBD 8GB

报告一个错误

低于PassMark测试中的延时，ns

28 46

左右 -64% 更低的延时
更快的写入速度，GB/s

13.3 1,852.4

测试中的平均数值
更高的内存带宽，mbps

21300 6400

左右 3.33 更高的带宽

规格

完整的技术规格清单

takeMS International AG TMS2GB264D082-805G 2GB

Crucial Technology BLS8G4D26BFSCK.8FBD 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

46 28
读取速度，GB/s

5,535.6 17.5
写入速度，GB/s

1,852.4 13.3
内存带宽，mbps

6400 21300

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 PC4-21300, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
时序/时钟速度

5-5-5-15 / 800 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

858 3317

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Kingston 9905458-017.A01LF 4GB

Kingston 9905458-017.A01LF 4GB

Apacer Technology 78.CAGQ7.ARC0B 8GB

Apacer Technology 78.CAGQ7.ARC0B 8GB

Samsung M471B5273CH0-CH9 4GB

Samsung M471B5273CH0-CH9 4GB

Crucial Technology CT8G4DFS8213.C8FBD1 8GB

Crucial Technology CT8G4DFS8213.C8FBD1 8GB

takeMS International AG TMS2GB264D082-805G 2GB

takeMS International AG TMS2GB264D082-805G 2GB

Crucial Technology BLS8G4D26BFSCK.8FBD 8GB

Crucial Technology BLS8G4D26BFSCK.8FBD 8GB

Avant Technology F6451U64F9333G 4GB

Avant Technology F6451U64F9333G 4GB

G Skill Intl F4-2133C15-8GVK 8GB

G Skill Intl F4-2133C15-8GVK 8GB

Kingston KHX2800C14D4/8GX 8GB

Kingston KHX2800C14D4/8GX 8GB

Micron Technology 8ATF1G64AZ-2G6E1 8GB

Micron Technology 8ATF1G64AZ-2G6E1 8GB

Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A-H9 16GB

Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A

G Skill Intl F4-4800C19-8GTESC 8GB

G Skill Intl F4-4800C19-8GTESC 8GB

G Skill Intl F3-1333C9-4GIS 4GB

G Skill Intl F3-1333C9-4GIS 4GB

Crucial Technology CT16G4SFRA266.M16FRS 16GB

Crucial Technology CT16G4SFRA266.M16FRS 16GB

Hynix Semiconductor (Hyundai Electronics) HMA41GR7MFR4N-TF 8GB

Hynix Semiconductor (Hyundai Electronics) HMA41GR7MFR4N

Crucial Technology BL32G32C16U4B.M16FB1 32GB

Crucial Technology BL32G32C16U4B.M16FB1 32GB

SK Hynix HMT42GR7AFR4A-PB 16GB

SK Hynix HMT42GR7AFR4A-PB 16GB

Crucial Technology CT8G4SFS8266.C8FN 8GB

Crucial Technology CT8G4SFS8266.C8FN 8GB

Asgard VMA45UG-MEC1U2AW1 8GB

Asgard VMA45UG-MEC1U2AW1 8GB

I’M Intelligent Memory Ltd. PF4OUN-2400CH0-08G-A 8GB

I’M Intelligent Memory Ltd. PF4OUN-2400CH0-08G-A 8GB

Kingston 99U5584-004.A00LF 4GB

Kingston 99U5584-004.A00LF 4GB

G Skill Intl F4-4000C19-4GTZ 4GB

G Skill Intl F4-4000C19-4GTZ 4GB

SK Hynix HYMP31GF72CMP4D5Y5 8GB

SK Hynix HYMP31GF72CMP4D5Y5 8GB

G Skill Intl F4-3600C16-8GTZN 8GB

G Skill Intl F4-3600C16-8GTZN 8GB

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

Crucial Technology CT8G4SFS824A.C8FBD1 8GB

Crucial Technology CT8G4SFS824A.C8FBD1 8GB

Smart Modular SG564568FG8N6KF-Z2 2GB

Smart Modular SG564568FG8N6KF-Z2 2GB

Samsung M471A5244CB0-CRC 4GB

Samsung M471A5244CB0-CRC 4GB