Unifosa Corporation GU332G0ALEPR8H2C6F 2GB vs Micron Technology 4ATF51264HZ-2G3B1 4GB

总分

Unifosa Corporation GU332G0ALEPR8H2C6F 2GB

Unifosa Corporation GU332G0ALEPR8H2C6F 2GB

总分

Micron Technology 4ATF51264HZ-2G3B1 4GB

Micron Technology 4ATF51264HZ-2G3B1 4GB

差异规格评论

差异

Unifosa Corporation GU332G0ALEPR8H2C6F 2GB

需要考虑的原因
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB

报告一个错误

更快的读取速度，GB/s

2 14.8

测试中的平均数值

Micron Technology 4ATF51264HZ-2G3B1 4GB

需要考虑的原因
Micron Technology 4ATF51264HZ-2G3B1 4GB

报告一个错误

低于PassMark测试中的延时，ns

35 96

左右 -174% 更低的延时
更快的写入速度，GB/s

11.2 1,336.0

测试中的平均数值
更高的内存带宽，mbps

19200 6400

左右 3 更高的带宽

规格

完整的技术规格清单

Unifosa Corporation GU332G0ALEPR8H2C6F 2GB

Micron Technology 4ATF51264HZ-2G3B1 4GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

96 35
读取速度，GB/s

2,725.2 14.8
写入速度，GB/s

1,336.0 11.2
内存带宽，mbps

6400 19200

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
时序/时钟速度

5-5-5-15 / 800 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

438 2336

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Unifosa Corporation GU332G0ALEPR8H2C6F 2GB

Unifosa Corporation GU332G0ALEPR8H2C6F 2GB

Micron Technology 4ATF51264HZ-2G3B1 4GB

Micron Technology 4ATF51264HZ-2G3B1 4GB

Smart Modular SG564568FG8N6KF-Z2 2GB

Smart Modular SG564568FG8N6KF-Z2 2GB

Corsair CMSX32GX4M2A3000C16 16GB

Corsair CMSX32GX4M2A3000C16 16GB

Kingston KVR800D2N6/2G 2GB

Kingston KVR800D2N6/2G 2GB

Mushkin 99[2/7/4]200F 8GB

Mushkin 99[2/7/4]200F 8GB

Corsair CMZ16GX3M2A2400C10 8GB

Corsair CMZ16GX3M2A2400C10 8GB

Mushkin MR[A/B]4U346GJJM8G 8GB

Mushkin MR[A/B]4U346GJJM8G 8GB

Unifosa Corporation GU332G0ALEPR8H2C6F 2GB

Unifosa Corporation GU332G0ALEPR8H2C6F 2GB

Gold Key Technology Co Ltd NMUD416E82-4600C 16GB

Gold Key Technology Co Ltd NMUD416E82-4600C 16GB

Kingston ACR256X64D3S1333C9 2GB

Kingston ACR256X64D3S1333C9 2GB

Smart Modular SF4721G8CKHH6DFSDS 8GB

Smart Modular SF4721G8CKHH6DFSDS 8GB

G Skill Intl F3-14900CL8-4GBXM 4GB

G Skill Intl F3-14900CL8-4GBXM 4GB

Crucial Technology CT16G4SFD8213.M16FB 16GB

Crucial Technology CT16G4SFD8213.M16FB 16GB

Samsung M3 78T2953EZ3-CF7 1GB

Samsung M3 78T2953EZ3-CF7 1GB

Crucial Technology CT16G4SFD824A.M16FH 16GB

Crucial Technology CT16G4SFD824A.M16FH 16GB

Patriot Memory (PDP Systems) PSD38G16002 8GB

Patriot Memory (PDP Systems) PSD38G16002 8GB

Crucial Technology CT16G4SFD8213.C16FH1 16GB

Crucial Technology CT16G4SFD8213.C16FH1 16GB

G Skill Intl F5-6400J3239G16G 16GB

G Skill Intl F5-6400J3239G16G 16GB

SK Hynix V-GeN D4H4GL26A8TL 4GB

SK Hynix V-GeN D4H4GL26A8TL 4GB

Kingston HX318C10FK/4 4GB

Kingston HX318C10FK/4 4GB

Chun Well Technology Holding Limited ND4U0840180BRPDE 8GB

Chun Well Technology Holding Limited ND4U0840180BRPDE 8

Hynix Semiconductor (Hyundai Electronics) HMT125S6AFP8C-G7 2GB

Hynix Semiconductor (Hyundai Electronics) HMT125S6AFP8C

Transcend Information TS1GLH64V4B 8GB

Transcend Information TS1GLH64V4B 8GB

A-DATA Technology DQVE1908 512MB

A-DATA Technology DQVE1908 512MB

Crucial Technology 8G4US2400.M8B1 8GB

Crucial Technology 8G4US2400.M8B1 8GB

Kingston 99U5584-001.A00LF 4GB

Kingston 99U5584-001.A00LF 4GB

SK Hynix HMA81GR7AFR8N-UH 8GB

SK Hynix HMA81GR7AFR8N-UH 8GB