RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
A-DATA Technology DQVE1908 512MB
G Skill Intl F4-3200C14-16GTZR 16GB
Compare
A-DATA Technology DQVE1908 512MB vs G Skill Intl F4-3200C14-16GTZR 16GB
Overall score
A-DATA Technology DQVE1908 512MB
Overall score
G Skill Intl F4-3200C14-16GTZR 16GB
Differences
Specifications
Comments
Differences
Reasons to consider
A-DATA Technology DQVE1908 512MB
Report a bug
Faster reading speed, GB/s
2
19.1
Average value in the tests
Reasons to consider
G Skill Intl F4-3200C14-16GTZR 16GB
Report a bug
Below the latency in the PassMark tests, ns
26
66
Around -154% lower latency
Faster write speed, GB/s
15.9
1,557.9
Average value in the tests
Higher memory bandwidth, mbps
17000
6400
Around 2.66 higher bandwidth
Specifications
Complete list of technical specifications
A-DATA Technology DQVE1908 512MB
G Skill Intl F4-3200C14-16GTZR 16GB
Main characteristics
Memory type
DDR2
DDR4
Latency in PassMark, ns
66
26
Read speed, GB/s
2,775.5
19.1
Write speed, GB/s
1,557.9
15.9
Memory bandwidth, mbps
6400
17000
Other
Description
PC2-6400, SSTL 1.8V, CAS Supported: 3 4 5
PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
Timings / Clock speed
5-5-5-15 / 800 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
Ranking PassMark (The more the better)
382
3876
A-DATA Technology DQVE1908 512MB RAM comparisons
Qimonda ITC 1GB
Micron Technology 36HTS1G72FY667A1D4 8GB
G Skill Intl F4-3200C14-16GTZR 16GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
A-DATA Technology VDQVE1B16 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
SK Hynix HMA851S6JJR6N-VK 4GB
Samsung M471B1G73DB0-YK0 8GB
G Skill Intl F4-3000C16-8GTRS 8GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Gold Key Technology Co Ltd NMUD416E82-4000F 16GB
Kingston 99U5474-010.A00LF 2GB
Crucial Technology CT16G4SFD824A.M16FH 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
SK Hynix HMA82GU6AFR8N-TF 16GB
PUSKILL DDR3 1600 8G 8GB
Crucial Technology BLE4G4D30AEEA.K8FE 4GB
Kingston 99U5584-004.A00LF 4GB
Essencore Limited KD4AGS88A-26N1600 16GB
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
G Skill Intl F4-2800C14-16GTZ 16GB
Samsung 1600 CL10 Series 8GB
Essencore Limited KD48GS88C-32N2200 8GB
Elpida EBJ17RG4EFWA-DJ-F 16GB
Corsair CMW32GX4M2C3333C16 16GB
takeMS International AG TMS2GB264D082-805G 2GB
G Skill Intl F4-3200C16-16GSXKB 16GB
Samsung M471B5273CH0-CH9 4GB
Crucial Technology CT16G4SFRA266.M8FB 16GB
Smart Modular SH564128FH8NZQNSCG 4GB
Roa Logic BV iGame DDR4 8G 3000 8GB
A-DATA Technology VDQVE1B16 2GB
Hynix Semiconductor (Hyundai Electronics) HMA82GU6MFR8N
Report a bug
×
Bug description
Source link