RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
A-DATA Technology DQVE1908 512MB
InnoDisk Corporation M4SI-8GS1NC0K-C 8GB
Compare
A-DATA Technology DQVE1908 512MB vs InnoDisk Corporation M4SI-8GS1NC0K-C 8GB
Overall score
A-DATA Technology DQVE1908 512MB
Overall score
InnoDisk Corporation M4SI-8GS1NC0K-C 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
A-DATA Technology DQVE1908 512MB
Report a bug
Faster reading speed, GB/s
2
17.2
Average value in the tests
Reasons to consider
InnoDisk Corporation M4SI-8GS1NC0K-C 8GB
Report a bug
Below the latency in the PassMark tests, ns
22
66
Around -200% lower latency
Faster write speed, GB/s
13.0
1,557.9
Average value in the tests
Higher memory bandwidth, mbps
21300
6400
Around 3.33 higher bandwidth
Specifications
Complete list of technical specifications
A-DATA Technology DQVE1908 512MB
InnoDisk Corporation M4SI-8GS1NC0K-C 8GB
Main characteristics
Memory type
DDR2
DDR4
Latency in PassMark, ns
66
22
Read speed, GB/s
2,775.5
17.2
Write speed, GB/s
1,557.9
13.0
Memory bandwidth, mbps
6400
21300
Other
Description
PC2-6400, SSTL 1.8V, CAS Supported: 3 4 5
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
Timings / Clock speed
5-5-5-15 / 800 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
Ranking PassMark (The more the better)
382
3007
A-DATA Technology DQVE1908 512MB RAM comparisons
Qimonda ITC 1GB
Micron Technology 36HTS1G72FY667A1D4 8GB
InnoDisk Corporation M4SI-8GS1NC0K-C 8GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
G Skill Intl F3-2133C9-4GAB 4GB
G Skill Intl F4-3200C14-16GVK 16GB
Crucial Technology CT25664AA800.M16FM 2GB
Samsung M391A1G43EB1-CRC 8GB
Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C
Avexir Technologies Corporation DDR4-2400 CL16 16GB 16G
A-DATA Technology AD73I1B1672EG 2GB
Micron Technology 8ATF51264HZ-2G1A2 4GB
Kingston KHX1866C9D3/8GX 8GB
G Skill Intl F4-4000C16-16GVK 16GB
Micron Technology 8ATF2G64HZ-3G2E2 16GB
Avexir Technologies Corporation DDR4-2666 CL15 4GB 4GB
A-DATA Technology AM2L16BC4R1-B0CS 4GB
Corsair CM4B16G7L2666A16K2-O 16GB
Samsung M3 78T5663RZ3-CE6 2GB
Crucial Technology BLS16G4D240FSC.16FAD 16GB
Essencore Limited KD4AGS88A-26N1600 16GB
Crucial Technology CT16G4DFD8266.C16FJ 16GB
G Skill Intl F4-4000C14-16GTZR 16GB
G Skill Intl F4-3000C16-16GSXWB 16GB
Samsung M471B1G73DB0-YK0 8GB
V-GEN D4H8GL26A8TS6 8GB
Kingston K531R8-MIN 4GB
Kingston KF3200C20S4/32GX 32MB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Netac Technology Co Ltd E40832A 8GB
Patriot Memory (PDP Systems) PSD34G16002 4GB
Hynix Semiconductor (Hyundai Electronics) HMA41GR7AFR4N
Report a bug
×
Bug description
Source link