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ASint Technology SSA302G08-EGN1C 4GB
Hynix Semiconductor (Hyundai Electronics) HMT351S6CFR8C-PB 4GB

ASint Technology SSA302G08-EGN1C 4GB vs Hynix Semiconductor (Hyundai Electronics) HMT351S6CFR8C-PB 4GB

Overall score
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ASint Technology SSA302G08-EGN1C 4GB

ASint Technology SSA302G08-EGN1C 4GB

Overall score
star star star star star
Hynix Semiconductor (Hyundai Electronics) HMT351S6CFR8C-PB 4GB

Hynix Semiconductor (Hyundai Electronics) HMT351S6CFR8C-PB 4GB

Differences Specifications Comments

Differences

ASint Technology SSA302G08-EGN1C 4GB Reasons to consider
ASint Technology SSA302G08-EGN1C 4GB
Report a bug
  • Below the latency in the PassMark tests, ns
    26 left arrow 28
    Around 7% lower latency
  • Faster reading speed, GB/s
    12.6 left arrow 11.8
    Average value in the tests
  • Faster write speed, GB/s
    9.5 left arrow 7.9
    Average value in the tests
Hynix Semiconductor (Hyundai Electronics) HMT351S6CFR8C-PB 4GB Reasons to consider
Hynix Semiconductor (Hyundai Electronics) HMT351S6CFR8C-PB 4GB
Report a bug

Specifications

Complete list of technical specifications
ASint Technology SSA302G08-EGN1C 4GB
Hynix Semiconductor (Hyundai Electronics) HMT351S6CFR8C-PB 4GB
Main characteristics
  • Memory type
    DDR3 left arrow DDR3
  • Latency in PassMark, ns
    26 left arrow 28
  • Read speed, GB/s
    12.6 left arrow 11.8
  • Write speed, GB/s
    9.5 left arrow 7.9
  • Memory bandwidth, mbps
    12800 left arrow 12800
Other
  • Description
    PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 left arrow PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11
  • Timings / Clock speed
    9-9-9-24 / 1600 MHz left arrow 9-9-9-24 / 1600 MHz
  • Ranking PassMark (The more the better)
    2174 left arrow 1920

ASint Technology SSA302G08-EGN1C 4GB RAM comparisons

Samsung M471B5273CH0-CH9 4GB
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Hynix Semiconductor (Hyundai Electronics) HMT351S6CFR8C-PB 4GB RAM comparisons

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RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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Latest comparisons

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