RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
en
Русский Русский English English Español Español Português Português Deutsch Deutsch Français Français Italiano Italiano Polski Polski 中文 中文 日本語 日本語
Corsair CMD8GX3M2A2933C12 4GB
Samsung M378A2G43MB1-CTD 16GB

Corsair CMD8GX3M2A2933C12 4GB vs Samsung M378A2G43MB1-CTD 16GB

Overall score
star star star star star
Corsair CMD8GX3M2A2933C12 4GB

Corsair CMD8GX3M2A2933C12 4GB

Overall score
star star star star star
Samsung M378A2G43MB1-CTD 16GB

Samsung M378A2G43MB1-CTD 16GB

Differences Specifications Comments

Differences

Corsair CMD8GX3M2A2933C12 4GB Reasons to consider
Corsair CMD8GX3M2A2933C12 4GB
Report a bug
  • Below the latency in the PassMark tests, ns
    28 left arrow 43
    Around 35% lower latency
  • Faster reading speed, GB/s
    13.5 left arrow 11.6
    Average value in the tests
Samsung M378A2G43MB1-CTD 16GB Reasons to consider
Samsung M378A2G43MB1-CTD 16GB
Report a bug
  • Faster write speed, GB/s
    11.2 left arrow 9.3
    Average value in the tests
  • Higher memory bandwidth, mbps
    25600 left arrow 10600
    Around 2.42 higher bandwidth

Specifications

Complete list of technical specifications
Corsair CMD8GX3M2A2933C12 4GB
Samsung M378A2G43MB1-CTD 16GB
Main characteristics
  • Memory type
    DDR3 left arrow DDR4
  • Latency in PassMark, ns
    28 left arrow 43
  • Read speed, GB/s
    13.5 left arrow 11.6
  • Write speed, GB/s
    9.3 left arrow 11.2
  • Memory bandwidth, mbps
    10600 left arrow 25600
Other
  • Description
    PC3-10600, 1.5V, CAS Supported: 5 6 8 9 left arrow PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
  • Timings / Clock speed
    7-7-7-20 / 1333 MHz left arrow 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
  • Ranking PassMark (The more the better)
    2278 left arrow 2615

Corsair CMD8GX3M2A2933C12 4GB RAM comparisons

Samsung M471B5273DH0-CK0 4GB
Mushkin 992015 (997015) 4GB

Samsung M378A2G43MB1-CTD 16GB RAM comparisons

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

Latest comparisons

Kingston 9905403-061.A00LF 2GB
Kingston 9905403-061.A00LF 2GB
Smart Modular SF4641G8CKHIWDFSEG 8GB
Smart Modular SF4641G8CKHIWDFSEG 8GB
Memory RAM
Corsair CMD8GX3M2A2933C12 4GB
Corsair CMD8GX3M2A2933C12 4GB
Samsung M378A2G43MB1-CTD 16GB
Samsung M378A2G43MB1-CTD 16GB
Memory RAM
Essencore Limited KD48GU88C-26N1600 8GB
Essencore Limited KD48GU88C-26N1600 8GB
Crucial Technology BLS4G4D26BFSC.8FBR2 4GB
Crucial Technology BLS4G4D26BFSC.8FBR2 4GB
Memory RAM
Micron Technology 16JSF25664HZ-1G1F1 2GB
Micron Technology 16JSF25664HZ-1G1F1 2GB
Team Group Inc. Team-Elite-2133 4GB
Team Group Inc. Team-Elite-2133 4GB
Memory RAM
Nanya Technology M2F4G64CB8HB9N-CG 4GB
Nanya Technology M2F4G64CB8HB9N-CG 4GB
Micron Technology 8ATF1G64HZ-2G1A1 8GB
Micron Technology 8ATF1G64HZ-2G1A1 8GB
Memory RAM
Apacer Technology 78.C1GET.9K10C 8GB
Apacer Technology 78.C1GET.9K10C 8GB
Avant Technology J644GU44J2320NQ 32GB
Avant Technology J644GU44J2320NQ 32GB
Memory RAM
Samsung M391B5673EH1-CH9 2GB
Samsung M391B5673EH1-CH9 2GB
Panram International Corporation W4U3200PS-16G 16GB
Panram International Corporation W4U3200PS-16G 16GB
Memory RAM
G Skill Intl F3-2133C9-4GAB 4GB
G Skill Intl F3-2133C9-4GAB 4GB
Samsung M471A2K43BB1-CTD 16GB
Samsung M471A2K43BB1-CTD 16GB
Memory RAM
Kingston 2GB-DDR2 800Mhz 2GB
Kingston 2GB-DDR2 800Mhz 2GB
Ramaxel Technology RMUA5200MR78HAF-3200 8GB
Ramaxel Technology RMUA5200MR78HAF-3200 8GB
Memory RAM
A-DATA Technology DQKD1A08 1GB
A-DATA Technology DQKD1A08 1GB
Crucial Technology BL16G32C16U4R.M16FE 16GB
Crucial Technology BL16G32C16U4R.M16FE 16GB
Memory RAM
SK Hynix HMT325S6CFR8C-PB 2GB
SK Hynix HMT325S6CFR8C-PB 2GB
Crucial Technology CT8G4DFD824A.C16FDD2 8GB
Crucial Technology CT8G4DFD824A.C16FDD2 8GB
Memory RAM
Smart Modular SH564128FH8NZQNSCG 4GB
Smart Modular SH564128FH8NZQNSCG 4GB
Hynix Semiconductor (Hyundai Electronics) GKE800SO102408-2400 8GB
Hynix Semiconductor (Hyundai Electronics) GKE800SO10240
Memory RAM
TwinMOS 8DPT5MK8-TATP 2GB
TwinMOS 8DPT5MK8-TATP 2GB
Micron Technology 8ATF1G64AZ-2G1A1 8GB
Micron Technology 8ATF1G64AZ-2G1A1 8GB
Memory RAM
Crucial Technology CT51264BD160B.C16F 4GB
Crucial Technology CT51264BD160B.C16F 4GB
Shenzhen Xingmem Technology Corp KRE-D4U2400M/4G 4GB
Shenzhen Xingmem Technology Corp KRE-D4U2400M/4G 4GB
Memory RAM