RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Crucial Technology BLS8G3N18AES4.16FE 8GB
Crucial Technology BLS8G4D30AESEK.M8FE1 8GB
Compare
Crucial Technology BLS8G3N18AES4.16FE 8GB vs Crucial Technology BLS8G4D30AESEK.M8FE1 8GB
Overall score
Crucial Technology BLS8G3N18AES4.16FE 8GB
Overall score
Crucial Technology BLS8G4D30AESEK.M8FE1 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Crucial Technology BLS8G3N18AES4.16FE 8GB
Report a bug
Reasons to consider
Crucial Technology BLS8G4D30AESEK.M8FE1 8GB
Report a bug
Below the latency in the PassMark tests, ns
27
42
Around -56% lower latency
Faster reading speed, GB/s
17.8
13.2
Average value in the tests
Faster write speed, GB/s
14.5
9.4
Average value in the tests
Higher memory bandwidth, mbps
19200
12800
Around 1.5 higher bandwidth
Specifications
Complete list of technical specifications
Crucial Technology BLS8G3N18AES4.16FE 8GB
Crucial Technology BLS8G4D30AESEK.M8FE1 8GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
42
27
Read speed, GB/s
13.2
17.8
Write speed, GB/s
9.4
14.5
Memory bandwidth, mbps
12800
19200
Other
Description
PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11
PC4-19200, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
Timings / Clock speed
9-9-9-24 / 1600 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
Ranking PassMark (The more the better)
2326
3386
Crucial Technology BLS8G3N18AES4.16FE 8GB RAM comparisons
Samsung M471B1G73DB0-YK0 8GB
Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A-PB 8GB
Crucial Technology BLS8G4D30AESEK.M8FE1 8GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Samsung M471B5273EB0-CK0 4GB
G Skill Intl F4-3200C15-8GTZSW 8GB
Samsung M378B5773DH0-CH9 2GB
Kingston KHX2400C15D4/16GX 16GB
Samsung M391B5673FH0-CH9 2GB
Kingston KHX2933C17S4/32G 32GB
Nanya Technology NT512T64U88B0BY-3C 512MB
Corsair CM4X8GD3000C15K4 8GB
SK Hynix HMT325S6BFR8C-H9 2GB
Corsair CMR16GX4M2Z3200C16 8GB
Samsung M393B1G70BH0-YK0 8GB
Smart Modular SMU4WEC8C1K0464FCG 8GB
Kingmax Semiconductor FLFE85F-C8KL9 2GB
Ramaxel Technology RMUA5120ME86H9F-2666 4GB
A-DATA Technology AM2L16BC4R1-B0AS 4GB
Micron Technology 8ATF51264HZ-2G1A2 4GB
Kingston KVR16N11/8-SP 8GB
G Skill Intl F4-3600C19-16GSXWB 16GB
A-DATA Technology DQKD1A08 1GB
Essencore Limited KD48GS481-26N1600 8GB
Samsung M393B2G70BH0-YK0 16GB
Mushkin MRA4S320GJJM32G 32GB
Kingston ACR512X64D3S13C9G 4GB
Crucial Technology CT8G4SFD8213.C16FADP 8GB
SK Hynix GKE800SO102408-2400 8GB
Samsung M471A5244CB0-CRC 4GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Chun Well Technology Holding Limited MD4U0836165BCW 8GB
Report a bug
×
Bug description
Source link