RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Crucial Technology CT25664BA160B.C16F 2GB
Samsung M393A1K43BB0-CRC 8GB
Compare
Crucial Technology CT25664BA160B.C16F 2GB vs Samsung M393A1K43BB0-CRC 8GB
Overall score
Crucial Technology CT25664BA160B.C16F 2GB
Overall score
Samsung M393A1K43BB0-CRC 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Crucial Technology CT25664BA160B.C16F 2GB
Report a bug
Below the latency in the PassMark tests, ns
29
48
Around 40% lower latency
Faster reading speed, GB/s
14.3
11.6
Average value in the tests
Faster write speed, GB/s
10.1
8.4
Average value in the tests
Reasons to consider
Samsung M393A1K43BB0-CRC 8GB
Report a bug
Higher memory bandwidth, mbps
19200
12800
Around 1.5 higher bandwidth
Specifications
Complete list of technical specifications
Crucial Technology CT25664BA160B.C16F 2GB
Samsung M393A1K43BB0-CRC 8GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
29
48
Read speed, GB/s
14.3
11.6
Write speed, GB/s
10.1
8.4
Memory bandwidth, mbps
12800
19200
Other
Description
PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
Timings / Clock speed
9-9-9-24 / 1600 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
Ranking PassMark (The more the better)
2227
2466
Crucial Technology CT25664BA160B.C16F 2GB RAM comparisons
Samsung M378B5773DH0-CH9 2GB
Heoriady M378B5273DH0-CK0 4GB
Samsung M393A1K43BB0-CRC 8GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Kingston 9905403-038.A00LF 4GB
Kingston KHX3200C16D4/8GX 8GB
Crucial Technology CT25664BA160B.C16F 2GB
Samsung M393A1K43BB0-CRC 8GB
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8
Crucial Technology CT16G4DFD8266.M16FE 16GB
Samsung M393B5270CH0-CH9 4GB
G Skill Intl F4-2800C15-8GRK 8GB
Nanya Technology M2F4G64CB8HG5N-CG 4GB
A-DATA Technology AD4U240038G17-BHYA 8GB
Kingston 99U5584-010.A00LF 4GB
Samsung M393A2K43BB1-CRC 16GB
Nanya Technology M2F8G64CB8HC9N-DI 8GB
Transcend Information JM2666HSB-8G 8GB
AMD R538G1601U2S 8GB
Patriot Memory (PDP Systems) PSD416G320081 16GB
Samsung 1600 CL10 Series 8GB
Samsung M393A4K40CB2-CTD 32GB
A-DATA Technology DOVF1B163G2G 2GB
Micron Technology 4ATF1G64AZ-3G2B1 8GB
Kingston ACR256X64D3S1333C9 2GB
Kingston ACR32D4S2S8ME-16 16GB
Nanya Technology NT4GC64C88B1NS-DI 4GB
Apacer Technology GD2.1140CH.001 4GB
Kingston KVR16N11/8-SP 8GB
Corsair CM4X8GE2666C16K8 8GB
G Skill Intl F3-14900CL8-4GBXM 4GB
Kingston 9905630-031.A00G 16GB
Report a bug
×
Bug description
Source link