RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Crucial Technology CT51264BA1339.D16F 4GB
Micron Technology 16ATF4G64HZ-3G2E1 32GB
Compare
Crucial Technology CT51264BA1339.D16F 4GB vs Micron Technology 16ATF4G64HZ-3G2E1 32GB
Overall score
Crucial Technology CT51264BA1339.D16F 4GB
Overall score
Micron Technology 16ATF4G64HZ-3G2E1 32GB
Differences
Specifications
Comments
Differences
Reasons to consider
Crucial Technology CT51264BA1339.D16F 4GB
Report a bug
Reasons to consider
Micron Technology 16ATF4G64HZ-3G2E1 32GB
Report a bug
Below the latency in the PassMark tests, ns
38
39
Around -3% lower latency
Faster reading speed, GB/s
16.4
13.2
Average value in the tests
Faster write speed, GB/s
13.7
8.2
Average value in the tests
Higher memory bandwidth, mbps
25600
10600
Around 2.42 higher bandwidth
Specifications
Complete list of technical specifications
Crucial Technology CT51264BA1339.D16F 4GB
Micron Technology 16ATF4G64HZ-3G2E1 32GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
39
38
Read speed, GB/s
13.2
16.4
Write speed, GB/s
8.2
13.7
Memory bandwidth, mbps
10600
25600
Other
Description
PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 10
PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 28
Timings / Clock speed
7-7-7-20 / 1333 MHz
20-20-20, 22-22-22, 24-24-24 / 3200 MHz
Ranking PassMark (The more the better)
2165
3206
Crucial Technology CT51264BA1339.D16F 4GB RAM comparisons
Samsung M378B5773DH0-CH9 2GB
Crucial Technology CT25664BA160B.C8FE 2GB
Micron Technology 16ATF4G64HZ-3G2E1 32GB RAM comparisons
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
A-DATA Technology DQVE1908 512MB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Samsung M3 78T3354BZ0-CCC 256MB
Teikon TMA81GS6CJR8N-VKSC 8GB
Samsung M378B5673EH1-CF8 2GB
Wilk Elektronik S.A. IR2400D464L17S/4G 4GB
Wilk Elektronik S.A. GR1333D364L9/4G 4GB
SK Hynix HMA84GR7AFR4N-UH 32GB
Samsung M393B1K70CH0-CH9 8GB
Netac Technology Co Ltd EKBLACK4083016A 8GB
Corsair CMY8GX3M2A2666C10 4GB
Corsair CMV16GX4M1L2400C16 16GB
Kingston KHX1866C9D3/8GX 8GB
Kingston KHX2400C12D4/16GX 16GB
Nanya Technology NT2GT64U8HD0BY-AD 2GB
A-DATA Technology AO1P24HC4N2-BWCS 4GB
Kllisre KRE-D3U1600M/8G 8GB
Corsair CMSX16GX4M2A3200C22 8GB
Kingston 9905458-017.A01LF 4GB
Corsair CMK8GX4M2A2800C16 4GB
G Skill Intl F3-2666C12-8GTXD 8GB
Corsair CMWX8GD3200C16W2E 8GB
A-DATA Technology ADOVE1A0834E 1GB
G Skill Intl F4-3300C16-4GRRD 4GB
Patriot Memory (PDP Systems) PSD22G8002 2GB
SanMax Technologies Inc. SMD-8G28HP-21P 8GB
Samsung M378B5673FH0-CH9 2GB
G Skill Intl F4-3300C16-8GTZKW 8GB
Hexon Technology Pte Ltd HEXON 1GB
Kingston HP26D4U9D8HC-16X 16GB
Report a bug
×
Bug description
Source link