RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Hexon Technology Pte Ltd HEXON 1GB
G Skill Intl F4-3200C16-16GTZ 16GB
Compare
Hexon Technology Pte Ltd HEXON 1GB vs G Skill Intl F4-3200C16-16GTZ 16GB
Overall score
Hexon Technology Pte Ltd HEXON 1GB
Overall score
G Skill Intl F4-3200C16-16GTZ 16GB
Differences
Specifications
Comments
Differences
Reasons to consider
Hexon Technology Pte Ltd HEXON 1GB
Report a bug
Faster reading speed, GB/s
3
18
Average value in the tests
Reasons to consider
G Skill Intl F4-3200C16-16GTZ 16GB
Report a bug
Below the latency in the PassMark tests, ns
28
62
Around -121% lower latency
Faster write speed, GB/s
14.1
1,843.6
Average value in the tests
Higher memory bandwidth, mbps
17000
6400
Around 2.66 higher bandwidth
Specifications
Complete list of technical specifications
Hexon Technology Pte Ltd HEXON 1GB
G Skill Intl F4-3200C16-16GTZ 16GB
Main characteristics
Memory type
DDR2
DDR4
Latency in PassMark, ns
62
28
Read speed, GB/s
3,556.6
18.0
Write speed, GB/s
1,843.6
14.1
Memory bandwidth, mbps
6400
17000
Other
Description
PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6
PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
Timings / Clock speed
5-5-5-15 / 800 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
Ranking PassMark (The more the better)
542
3593
Hexon Technology Pte Ltd HEXON 1GB RAM comparisons
SpecTek Incorporated CONQUR6672GB-A023- 2GB
Qimonda 72T512220EP3SC2 4GB
G Skill Intl F4-3200C16-16GTZ 16GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Crucial Technology CT51264BD1339.M16F 4GB
Team Group Inc. DDR4 2666 8GB
Samsung M378A1G43DB0-CPB 8GB
G Skill Intl F4-3600C19-8GVSB 8GB
Crucial Technology CT51264BD160B.C16F 4GB
Corsair CMK128GX4M8B3333C16 16GB
Kingston KP4T2F-PSB 4GB
Kingmax Semiconductor GLLF62F-C6---------- 4GB
Kingston ACR512X64D3S13C9G 4GB
Samsung M386A4K40BB0-CRC 32GB
A-DATA Technology DOVF1B163G2G 2GB
Essencore Limited IM44GU48N21-FFFHM 4GB
Samsung M378B5773DH0-CH9 2GB
Panram International Corporation W4U2666PS-8GC19 8GB
PNY Electronics PNY 2GB
Micron Technology 18ASF2G72AZ-2G6D1 16GB
Samsung M378B5673EH1-CF8 2GB
Shenzhen Technology Co Ltd 8GB
Samsung M378B5773DH0-CH9 2GB
A-DATA Technology DDR4 2800 2OZ 4GB
Nanya Technology NT4GC64B8HG0NS-CG 4GB
Smart Modular SMU4WEC8C1K0464FCG 8GB
A-DATA Technology DQKD1A08 1GB
Apacer Technology 78.BAGN8.40C0B 4GB
Kingston 9965525-018.A00LF 4GB
Essencore Limited IM48GU88N26-GIIHA 8GB
Samsung M393B1G70BH0-CK0 8GB
Hynix Semiconductor (Hyundai Electronics) HMA81GU6AFR8N
Report a bug
×
Bug description
Source link