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Hynix Semiconductor (Hyundai Electronics) HMT125S6AFP8C-G7 2GB
G Skill Intl F4-3200C14-8GTZKW 8GB

Hynix Semiconductor (Hyundai Electronics) HMT125S6AFP8C-G7 2GB vs G Skill Intl F4-3200C14-8GTZKW 8GB

Overall score
star star star star star
Hynix Semiconductor (Hyundai Electronics) HMT125S6AFP8C-G7 2GB

Hynix Semiconductor (Hyundai Electronics) HMT125S6AFP8C-G7 2GB

Overall score
star star star star star
G Skill Intl F4-3200C14-8GTZKW 8GB

G Skill Intl F4-3200C14-8GTZKW 8GB

Differences Specifications Comments

Differences

Hynix Semiconductor (Hyundai Electronics) HMT125S6AFP8C-G7 2GB Reasons to consider
Hynix Semiconductor (Hyundai Electronics) HMT125S6AFP8C-G7 2GB
Report a bug
G Skill Intl F4-3200C14-8GTZKW 8GB Reasons to consider
G Skill Intl F4-3200C14-8GTZKW 8GB
Report a bug
  • Below the latency in the PassMark tests, ns
    25 left arrow 28
    Around -12% lower latency
  • Faster reading speed, GB/s
    19.2 left arrow 10.9
    Average value in the tests
  • Faster write speed, GB/s
    15.7 left arrow 7.1
    Average value in the tests
  • Higher memory bandwidth, mbps
    17000 left arrow 8500
    Around 2 higher bandwidth

Specifications

Complete list of technical specifications
Hynix Semiconductor (Hyundai Electronics) HMT125S6AFP8C-G7 2GB
G Skill Intl F4-3200C14-8GTZKW 8GB
Main characteristics
  • Memory type
    DDR3 left arrow DDR4
  • Latency in PassMark, ns
    28 left arrow 25
  • Read speed, GB/s
    10.9 left arrow 19.2
  • Write speed, GB/s
    7.1 left arrow 15.7
  • Memory bandwidth, mbps
    8500 left arrow 17000
Other
  • Description
    PC3-8500, 1.5V, CAS Supported: 6 7 8 left arrow PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
  • Timings / Clock speed
    7-7-7-20 / 1066 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • Ranking PassMark (The more the better)
    1668 left arrow 3680

Hynix Semiconductor (Hyundai Electronics) HMT125S6AFP8C-G7 2GB RAM comparisons

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