RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB
A-DATA Technology AO1E34RCSV1-BD7S 16GB
Compare
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB vs A-DATA Technology AO1E34RCSV1-BD7S 16GB
Overall score
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB
Overall score
A-DATA Technology AO1E34RCSV1-BD7S 16GB
Differences
Specifications
Comments
Differences
Reasons to consider
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB
Report a bug
Faster reading speed, GB/s
3
16.2
Average value in the tests
Reasons to consider
A-DATA Technology AO1E34RCSV1-BD7S 16GB
Report a bug
Below the latency in the PassMark tests, ns
59
65
Around -10% lower latency
Faster write speed, GB/s
13.7
1,592.0
Average value in the tests
Higher memory bandwidth, mbps
25600
5300
Around 4.83 higher bandwidth
Specifications
Complete list of technical specifications
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB
A-DATA Technology AO1E34RCSV1-BD7S 16GB
Main characteristics
Memory type
DDR2
DDR4
Latency in PassMark, ns
65
59
Read speed, GB/s
3,580.8
16.2
Write speed, GB/s
1,592.0
13.7
Memory bandwidth, mbps
5300
25600
Other
Description
PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5
PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24
Timings / Clock speed
5-5-5-15 / 667 MHz
20-20-20, 22-22-22, 24-24-24 / 3200 MHz
Ranking PassMark (The more the better)
572
2727
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB RAM comparisons
Samsung M471B5773DH0-CK0 2GB
Kingston 99U5295-011.A00LF 2GB
A-DATA Technology AO1E34RCSV1-BD7S 16GB RAM comparisons
Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Hexon Technology Pte Ltd HEXON 1GB
G Skill Intl F4-3733C17-8GTZKW 8GB
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Kingston 9905743-043.A00G 16GB
SK Hynix HMT151R7TFR4C-H9 4GB
Crucial Technology CT8G4DFS824A.M8FH3 8GB
Kingston 9905403-156.A00LF 2GB
Crucial Technology BLS8G4D26BFSEK.8FD 8GB
Kingston KHX2400C11D3/4GX 4GB
G Skill Intl F4-2800C18-8GRS 8GB
Samsung M3 78T5663EH3-CF7 2GB
Kingston KHX3200C20S4/8G 8GB
Samsung M3 78T3354BZ0-CCC 256MB
Essencore Limited KD4AGU880-36A180X 16GB
Samsung M393B5170FH0-CK0 4GB
Kingston XVTW4H-MIE 32GB
Micron Technology 8ATF2G64HZ-3G2E2 16GB
Patriot Memory (PDP Systems) 3600 C17 Series 4GB
Kingston 9905403-090.A01LF 4GB
Transcend Information TS512MSH64V1H 4GB
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Crucial Technology BL8G32C16U4WL.M8FE1 8GB
Corsair CML8GX3M2A1600C9 4GB
SK Hynix HMA84GR7JJR4N-VK 32GB
Kingston 99U5584-004.A00LF 4GB
G Skill Intl F4-3600C16-32GTZR 32GB
A-DATA Technology DDR4 2400 16GB
Corsair CMK8GX4M2C3000C16 4GB
Report a bug
×
Bug description
Source link