RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB
G Skill Intl F4-2400C16-8GRS 8GB
Compare
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB vs G Skill Intl F4-2400C16-8GRS 8GB
Overall score
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB
Overall score
G Skill Intl F4-2400C16-8GRS 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB
Report a bug
Faster reading speed, GB/s
3
15.4
Average value in the tests
Reasons to consider
G Skill Intl F4-2400C16-8GRS 8GB
Report a bug
Below the latency in the PassMark tests, ns
34
65
Around -91% lower latency
Faster write speed, GB/s
11.9
1,592.0
Average value in the tests
Higher memory bandwidth, mbps
19200
5300
Around 3.62 higher bandwidth
Specifications
Complete list of technical specifications
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB
G Skill Intl F4-2400C16-8GRS 8GB
Main characteristics
Memory type
DDR2
DDR4
Latency in PassMark, ns
65
34
Read speed, GB/s
3,580.8
15.4
Write speed, GB/s
1,592.0
11.9
Memory bandwidth, mbps
5300
19200
Other
Description
PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
Timings / Clock speed
5-5-5-15 / 667 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
Ranking PassMark (The more the better)
572
2780
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB RAM comparisons
Samsung M471B5773DH0-CK0 2GB
Kingston 99U5295-011.A00LF 2GB
G Skill Intl F4-2400C16-8GRS 8GB RAM comparisons
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Nanya Technology M2F8G64CB8HC9N-DI 8GB
Corsair CM4X8GD3000C16K4D 8GB
Kingston 99U5471-020.A00LF 4GB
Essencore Limited IM48GU88N24-FFFHAB 8GB
Samsung 1600 CL10 Series 8GB
Gloway International (HK) STK4U2400D15082C 8GB
Samsung M378B5773DH0-CH9 2GB
Kingmax Semiconductor GLAF62F-D8---------- 4GB
Kingston KHX1866C10D3/4G 4GB
Corsair CMK128GX4M8A2666C16 16GB
Crucial Technology CT25664BA160B.C16F 2GB
G Skill Intl F4-3200C16-16GTZA 16GB
Crucial Technology CT51264BD1339.M16F 4GB
Crucial Technology BLS8G4D30AESBK.M8FE 8GB
takeMS International AG TMS2GB264D082-805G 2GB
G Skill Intl F4-2400C16-16GFXR 16GB
Corsair CMZ16GX3M2A2400C10 8GB
Mushkin MRA4S266GHHF32G 32GB
Samsung M393B1G70BH0-CK0 8GB
G Skill Intl F4-3600C16-8GTRG 8GB
Swissbit MEU25664D6BC2EP-30 2GB
Hynix Semiconductor (Hyundai Electronics) HMA42GR7AFR4N
Samsung M3 78T3354BZ0-CCC 256MB
G Skill Intl F4-2400C16-4GRS 4GB
Smart Modular SH564128FH8NZQNSCG 4GB
Patriot Memory (PDP Systems) 3866 C18 Series 8GB
Samsung M393B1G70BH0-YK0 8GB
Kingston KP6FH5-MIE 32GB
Report a bug
×
Bug description
Source link