RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Crucial Technology CT8G4DFS8266.M8FD 8GB
Compare
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB vs Crucial Technology CT8G4DFS8266.M8FD 8GB
Overall score
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Overall score
Crucial Technology CT8G4DFS8266.M8FD 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Report a bug
Below the latency in the PassMark tests, ns
24
33
Around 27% lower latency
Faster write speed, GB/s
12.5
10.8
Average value in the tests
Reasons to consider
Crucial Technology CT8G4DFS8266.M8FD 8GB
Report a bug
Faster reading speed, GB/s
16.3
16
Average value in the tests
Higher memory bandwidth, mbps
21300
19200
Around 1.11 higher bandwidth
Specifications
Complete list of technical specifications
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Crucial Technology CT8G4DFS8266.M8FD 8GB
Main characteristics
Memory type
DDR4
DDR4
Latency in PassMark, ns
24
33
Read speed, GB/s
16.0
16.3
Write speed, GB/s
12.5
10.8
Memory bandwidth, mbps
19200
21300
Other
Description
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
PC4-21300, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23
Timings / Clock speed
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
Ranking PassMark (The more the better)
2925
2795
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB RAM comparisons
Corsair CMK64GX5M2B5200C40 32GB
Samsung M3 93T2950EZ3-CCC 1GB
Crucial Technology CT8G4DFS8266.M8FD 8GB RAM comparisons
Samsung M393B1K70CH0-CH9 8GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Crucial Technology CT25664BA160B.C16F 2GB
Samsung M378B5273DH0-CK0 4GB
A-DATA Technology DOVF1B163G2G 2GB
Corsair CMW32GX4M2C3466C16 16GB
A-DATA Technology DQVE1908 512MB
Apacer Technology GD2.22428S.001 8GB
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
G Skill Intl F4-3200C16-16GTZRX 16GB
Kingston 9905584-016.A00LF 4GB
Kingston 9905664-010.A00G 4GB
A-DATA Technology AM2L16BC4R1-B0AS 4GB
V-GEN D4H8GS24A8 8GB
Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C
Avexir Technologies Corporation DDR4-2400 CL16 16GB 16G
ASint Technology SSA302G08-EGN1C 4GB
Kingston 99U5701-003.A00G 16GB
Kingston KHX1866C9D3/8GX 8GB
Apacer Technology 78.B1GN3.AZ32B 4GB
A-DATA Technology AM2U16BC4P2-B05B 4GB
INTENSO 5641162 8GB
Kingston KHX1600C9S3L/4G 4GB
Patriot Memory (PDP Systems) 2800 C16 Series 8GB
A-DATA Technology ADOVE1A0834E 1GB
SK Hynix HMA84GL7AFR4N-UH 32GB
SK Hynix HYMP31GF72CMP4D5Y5 8GB
G Skill Intl F4-3600C14-8GTZN 8GB
Lexar Co Limited LD4AU016G-H3200GST 16GB
G Skill Intl F4-3600C14-16GTRS 16GB
Report a bug
×
Bug description
Source link