RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
G Skill Intl F4-2933C16-16GTZRX 16GB
Compare
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB vs G Skill Intl F4-2933C16-16GTZRX 16GB
Overall score
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Overall score
G Skill Intl F4-2933C16-16GTZRX 16GB
Differences
Specifications
Comments
Differences
Reasons to consider
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Report a bug
Higher memory bandwidth, mbps
19200
17000
Around 1.13% higher bandwidth
Reasons to consider
G Skill Intl F4-2933C16-16GTZRX 16GB
Report a bug
Below the latency in the PassMark tests, ns
22
24
Around -9% lower latency
Faster reading speed, GB/s
16.7
16
Average value in the tests
Faster write speed, GB/s
13.4
12.5
Average value in the tests
Specifications
Complete list of technical specifications
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
G Skill Intl F4-2933C16-16GTZRX 16GB
Main characteristics
Memory type
DDR4
DDR4
Latency in PassMark, ns
24
22
Read speed, GB/s
16.0
16.7
Write speed, GB/s
12.5
13.4
Memory bandwidth, mbps
19200
17000
Other
Description
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
Timings / Clock speed
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
Ranking PassMark (The more the better)
2925
3188
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB RAM comparisons
Corsair CMK64GX5M2B5200C40 32GB
Samsung M3 93T2950EZ3-CCC 1GB
G Skill Intl F4-2933C16-16GTZRX 16GB RAM comparisons
Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
G Skill Intl F4-3600C16-8GTZKK 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
G Skill Intl F4-4000C16-16GTZR 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
G Skill Intl F4-2933C16-16GTZRX 16GB
Transcend Information TS512MSK64W6H 4GB
Kingston KHX2666C16S4/32G 32GB
takeMS International AG TMS2GB264D082-805G 2GB
Shenzhen Xingmem Technology Corp KRE-D4U2400M/8G 8GB
Mushkin 991586 2GB
G Skill Intl F4-4266C19-8GTZR 8GB
Samsung M395T2863QZ4-CF76 1GB
Mushkin 99[2/7/4]209F 8GB
TwinMOS 8DHE3MN8-HATP 2GB
G Skill Intl F4-2800C14-16GVK 16GB
Samsung M471B5273DH0-CH9 4GB
Kingston KP6FH5-MIE 32GB
SK Hynix HMT325S6BFR8C-H9 2GB
Kingston KHX3600C17D4/8GX 8GB
Samsung M471A1K43BB1-CRC 8GB
Crucial Technology CT8G4SFS824A.C8FAD1 8GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
G Skill Intl F4-3600C16-8GTRG 8GB
SK Hynix HMT325S6BFR8C-H9 2GB
G Skill Intl F4-3200C16-16GIS 16GB
Kingston KHX2400C11D3/4GX 4GB
Samsung M378A2K43CB1-CRC 16GB
Patriot Memory (PDP Systems) PSD22G8002 2GB
Corsair CM4B8G1J3000K16W4 8GB
Report a bug
×
Bug description
Source link