RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Gloway International (HK) STK2400CL17SNB16GB 16GB
Compare
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB vs Gloway International (HK) STK2400CL17SNB16GB 16GB
Overall score
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Overall score
Gloway International (HK) STK2400CL17SNB16GB 16GB
Differences
Specifications
Comments
Differences
Reasons to consider
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Report a bug
Reasons to consider
Gloway International (HK) STK2400CL17SNB16GB 16GB
Report a bug
Below the latency in the PassMark tests, ns
23
24
Around -4% lower latency
Faster reading speed, GB/s
17.5
16
Average value in the tests
Faster write speed, GB/s
13.2
12.5
Average value in the tests
Specifications
Complete list of technical specifications
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Gloway International (HK) STK2400CL17SNB16GB 16GB
Main characteristics
Memory type
DDR4
DDR4
Latency in PassMark, ns
24
23
Read speed, GB/s
16.0
17.5
Write speed, GB/s
12.5
13.2
Memory bandwidth, mbps
19200
19200
Other
Description
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
Timings / Clock speed
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
Ranking PassMark (The more the better)
2925
3171
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB RAM comparisons
Corsair CMK64GX5M2B5200C40 32GB
Samsung M3 93T2950EZ3-CCC 1GB
Gloway International (HK) STK2400CL17SNB16GB 16GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Samsung M393B1K70CH0-CH9 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Kingston 99U5428-018.A00LF 8GB
Corsair CMW16GX4M2A2666C16 8GB
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Eudar Technology Inc. 8GXMP3000CL16 8GB
Ramaxel Technology RMR5040ED58E9W1600 4GB
Crucial Technology CT16G4DFRA32A.M16FJ1 16GB
AMD R538G1601U2S-UO 8GB
Patriot Memory (PDP Systems) PSD32G16002 2GB
Samsung M3 78T2953EZ3-CF7 1GB
Samsung M378A2G43MB1-CTD 16GB
Samsung M3 78T2863EHS-CF7 1GB
Kingston 9905598-025.A00G 8GB
G Skill Intl F5-6400J3239G16G 16GB
Maxsun MSD44G24Q3 4GB
Kingston 9905403-444.A00LF 4GB
Transcend Information JM2666HLB-8G 8GB
G Skill Intl F3-14900CL8-4GBXM 4GB
Crucial Technology CT16G4SFD832A.C16FN 16GB
Kingston KHX1600C9D3/8G 8GB
Crucial Technology CT4G4DFS8213.C8FAD11 4GB
Qimonda 72T128420EFA3SB2 1GB
Patriot Memory (PDP Systems) PSD416G32002 16GB
Samsung 9905599-020.A00G 16GB
Samsung 18ASF1G72PDZ-2G1B1 16GB
Elpida EBE21UE8ACUA-8G-E 2GB
Kingston 99U5712-009.A00G 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
OM Nanotech Pvt.Ltd V2D4SF32GB2G82G83200 32GB
Report a bug
×
Bug description
Source link