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Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Samsung V-GeN D4S8GL26A8TL5 8GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB vs Samsung V-GeN D4S8GL26A8TL5 8GB

Overall score
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Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Overall score
star star star star star
Samsung V-GeN D4S8GL26A8TL5 8GB

Samsung V-GeN D4S8GL26A8TL5 8GB

Differences Specifications Comments

Differences

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB Reasons to consider
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Report a bug
Samsung V-GeN D4S8GL26A8TL5 8GB Reasons to consider
Samsung V-GeN D4S8GL26A8TL5 8GB
Report a bug
  • Below the latency in the PassMark tests, ns
    22 left arrow 24
    Around -9% lower latency
  • Faster reading speed, GB/s
    18 left arrow 16
    Average value in the tests
  • Faster write speed, GB/s
    12.8 left arrow 12.5
    Average value in the tests

Specifications

Complete list of technical specifications
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Samsung V-GeN D4S8GL26A8TL5 8GB
Main characteristics
  • Memory type
    DDR4 left arrow DDR4
  • Latency in PassMark, ns
    24 left arrow 22
  • Read speed, GB/s
    16.0 left arrow 18.0
  • Write speed, GB/s
    12.5 left arrow 12.8
  • Memory bandwidth, mbps
    19200 left arrow 19200
Other
  • Description
    PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
  • Timings / Clock speed
    15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • Ranking PassMark (The more the better)
    2925 left arrow 3110

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB RAM comparisons

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Samsung V-GeN D4S8GL26A8TL5 8GB RAM comparisons

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RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
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