RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Transcend Information JM3200HLE-16G 16GB
Compare
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB vs Transcend Information JM3200HLE-16G 16GB
Overall score
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Overall score
Transcend Information JM3200HLE-16G 16GB
Differences
Specifications
Comments
Differences
Reasons to consider
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Report a bug
Below the latency in the PassMark tests, ns
24
30
Around 20% lower latency
Reasons to consider
Transcend Information JM3200HLE-16G 16GB
Report a bug
Faster reading speed, GB/s
18.4
16
Average value in the tests
Faster write speed, GB/s
15.4
12.5
Average value in the tests
Higher memory bandwidth, mbps
25600
19200
Around 1.33 higher bandwidth
Specifications
Complete list of technical specifications
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Transcend Information JM3200HLE-16G 16GB
Main characteristics
Memory type
DDR4
DDR4
Latency in PassMark, ns
24
30
Read speed, GB/s
16.0
18.4
Write speed, GB/s
12.5
15.4
Memory bandwidth, mbps
19200
25600
Other
Description
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 22 24
Timings / Clock speed
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
20-20-20, 22-22-22, 24-24-24 / 3200 MHz
Ranking PassMark (The more the better)
2925
3694
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB RAM comparisons
Corsair CMK64GX5M2B5200C40 32GB
Samsung M3 93T2950EZ3-CCC 1GB
Transcend Information JM3200HLE-16G 16GB RAM comparisons
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
G Skill Intl F3-14900CL8-4GBXM 4GB
Micron Technology 16A6A2G64HZ-2-2E1 16GB
Samsung M4 70T5663CZ3-CE6 2GB
Kingmax Semiconductor GSAH22F-18---------- 16GB
Crucial Technology CT25664AA800.M16FM 2GB
InnoDisk Corporation M4S0-AGS1O5IK 16GB
Kingmax Semiconductor FLFE85F-C8KL9 2GB
Micron Technology M471A1K43BB1-CRC 8GB
Avant Technology F641GU67F9333G 8GB
Inmos + 256MB
A-DATA Technology VDQVE1B16 2GB
Apacer Technology 78.C1GMW.AUC0B 8GB
Samsung DDR3 8GB 1600MHz 8GB
Corsair CMD16GX4M2B3200C16 8GB
Kingston 9905584-016.A00LF 4GB
Corsair CMU16GX4M2C3000C15 8GB
Samsung M393A1G40DB0-CPB 8GB
G Skill Intl F4-3000C15-8GRK 8GB
Kingston 9905471-002.A00LF 2GB
Micron Technology 8ATF1G64HZ-2G1A1 8GB
Samsung M378B5773DH0-CH9 2GB
G Skill Intl F4-2133C15-16GFT 16GB
Samsung DDR3 8GB 1600MHz 8GB
SK Hynix HMA851S6DJR6N-XN 4GB
Samsung M3 78T3354BZ0-CCC 256MB
Crucial Technology CT32G4SFD832A.M16FB 32GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology BLS8G4D32AESTK.M8FE 8GB
Report a bug
×
Bug description
Source link