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Kingston 39P5429-006.AO01 2GB
Samsung M471A1G44AB0-CWE 8GB

Kingston 39P5429-006.AO01 2GB vs Samsung M471A1G44AB0-CWE 8GB

Overall score
star star star star star
Kingston 39P5429-006.AO01 2GB

Kingston 39P5429-006.AO01 2GB

Overall score
star star star star star
Samsung M471A1G44AB0-CWE 8GB

Samsung M471A1G44AB0-CWE 8GB

Differences Specifications Comments

Differences

Kingston 39P5429-006.AO01 2GB Reasons to consider
Kingston 39P5429-006.AO01 2GB
Report a bug
  • Below the latency in the PassMark tests, ns
    44 left arrow 50
    Around 12% lower latency
  • Faster reading speed, GB/s
    6 left arrow 15.3
    Average value in the tests
Samsung M471A1G44AB0-CWE 8GB Reasons to consider
Samsung M471A1G44AB0-CWE 8GB
Report a bug
  • Faster write speed, GB/s
    10.9 left arrow 1,892.9
    Average value in the tests
  • Higher memory bandwidth, mbps
    25600 left arrow 6400
    Around 4 higher bandwidth

Specifications

Complete list of technical specifications
Kingston 39P5429-006.AO01 2GB
Samsung M471A1G44AB0-CWE 8GB
Main characteristics
  • Memory type
    DDR2 left arrow DDR4
  • Latency in PassMark, ns
    44 left arrow 50
  • Read speed, GB/s
    6,181.5 left arrow 15.3
  • Write speed, GB/s
    1,892.9 left arrow 10.9
  • Memory bandwidth, mbps
    6400 left arrow 25600
Other
  • Description
    PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 left arrow PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24
  • Timings / Clock speed
    5-5-5-15 / 800 MHz left arrow 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
  • Ranking PassMark (The more the better)
    851 left arrow 2512

Kingston 39P5429-006.AO01 2GB RAM comparisons

Hynix Semiconductor (Hyundai Electronics) HYMP125U64CP8-S6 2GB
G Skill Intl F4-3200C16-32GTRG 32GB

Samsung M471A1G44AB0-CWE 8GB RAM comparisons

Samsung M386B4G70DM0-CMA4 32GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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