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Kingston KVR533D2N4 512MB
Shanghai Kuxin Microelectronics Ltd NMSO416E82-2400E 16GB

Kingston KVR533D2N4 512MB vs Shanghai Kuxin Microelectronics Ltd NMSO416E82-2400E 16GB

Overall score
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Kingston KVR533D2N4 512MB

Kingston KVR533D2N4 512MB

Overall score
star star star star star
Shanghai Kuxin Microelectronics Ltd NMSO416E82-2400E 16GB

Shanghai Kuxin Microelectronics Ltd NMSO416E82-2400E 16GB

Differences Specifications Comments

Differences

Kingston KVR533D2N4 512MB Reasons to consider
Kingston KVR533D2N4 512MB
Report a bug
Shanghai Kuxin Microelectronics Ltd NMSO416E82-2400E 16GB Reasons to consider
Shanghai Kuxin Microelectronics Ltd NMSO416E82-2400E 16GB
Report a bug
  • Below the latency in the PassMark tests, ns
    24 left arrow 75
    Around -213% lower latency
  • Faster reading speed, GB/s
    15.6 left arrow 1
    Average value in the tests
  • Faster write speed, GB/s
    12.1 left arrow 1,672.1
    Average value in the tests
  • Higher memory bandwidth, mbps
    19200 left arrow 4200
    Around 4.57 higher bandwidth

Specifications

Complete list of technical specifications
Kingston KVR533D2N4 512MB
Shanghai Kuxin Microelectronics Ltd NMSO416E82-2400E 16GB
Main characteristics
  • Memory type
    DDR2 left arrow DDR4
  • Latency in PassMark, ns
    75 left arrow 24
  • Read speed, GB/s
    1,943.5 left arrow 15.6
  • Write speed, GB/s
    1,672.1 left arrow 12.1
  • Memory bandwidth, mbps
    4200 left arrow 19200
Other
  • Description
    PC2-4200, SSTL 1.8V, CAS Supported: 3 4 5 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
  • Timings / Clock speed
    4-4-4-12 / 533 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • Ranking PassMark (The more the better)
    301 left arrow 2852

Kingston KVR533D2N4 512MB RAM comparisons

Kingston KC6844-ELG37 1GB
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Shanghai Kuxin Microelectronics Ltd NMSO416E82-2400E 16GB RAM comparisons

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
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