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Nanya Technology M2F4GH64CB8HB6N-CG 4GB
Samsung M378B1G73DB0-CK0 8GB

Nanya Technology M2F4GH64CB8HB6N-CG 4GB vs Samsung M378B1G73DB0-CK0 8GB

Overall score
star star star star star
Nanya Technology M2F4GH64CB8HB6N-CG 4GB

Nanya Technology M2F4GH64CB8HB6N-CG 4GB

Overall score
star star star star star
Samsung M378B1G73DB0-CK0 8GB

Samsung M378B1G73DB0-CK0 8GB

Differences Specifications Comments

Differences

Nanya Technology M2F4GH64CB8HB6N-CG 4GB Reasons to consider
Nanya Technology M2F4GH64CB8HB6N-CG 4GB
Report a bug
  • Below the latency in the PassMark tests, ns
    26 left arrow 42
    Around 38% lower latency
Samsung M378B1G73DB0-CK0 8GB Reasons to consider
Samsung M378B1G73DB0-CK0 8GB
Report a bug
  • Faster reading speed, GB/s
    13.5 left arrow 12.3
    Average value in the tests
  • Faster write speed, GB/s
    8.7 left arrow 7.1
    Average value in the tests
  • Higher memory bandwidth, mbps
    12800 left arrow 10600
    Around 1.21 higher bandwidth

Specifications

Complete list of technical specifications
Nanya Technology M2F4GH64CB8HB6N-CG 4GB
Samsung M378B1G73DB0-CK0 8GB
Main characteristics
  • Memory type
    DDR3 left arrow DDR3
  • Latency in PassMark, ns
    26 left arrow 42
  • Read speed, GB/s
    12.3 left arrow 13.5
  • Write speed, GB/s
    7.1 left arrow 8.7
  • Memory bandwidth, mbps
    10600 left arrow 12800
Other
  • Description
    PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 left arrow PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11
  • Timings / Clock speed
    7-7-7-20 / 1333 MHz left arrow 9-9-9-24 / 1600 MHz
  • Ranking PassMark (The more the better)
    1952 left arrow 2348

Nanya Technology M2F4GH64CB8HB6N-CG 4GB RAM comparisons

SK Hynix HMT125U6DFR8C-H9 2GB
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Samsung M378B1G73DB0-CK0 8GB RAM comparisons

Patriot Memory (PDP Systems) PSD38G16002 8GB
Samsung M378B1G73EB0-CK0 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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