RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Nanya Technology M2F8G64CB8HC9N-DI 8GB
Samsung M391A1G43EB1-CPB 8GB
Compare
Nanya Technology M2F8G64CB8HC9N-DI 8GB vs Samsung M391A1G43EB1-CPB 8GB
Overall score
Nanya Technology M2F8G64CB8HC9N-DI 8GB
Overall score
Samsung M391A1G43EB1-CPB 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Nanya Technology M2F8G64CB8HC9N-DI 8GB
Report a bug
Faster reading speed, GB/s
13.9
12.4
Average value in the tests
Reasons to consider
Samsung M391A1G43EB1-CPB 8GB
Report a bug
Below the latency in the PassMark tests, ns
25
37
Around -48% lower latency
Faster write speed, GB/s
10.6
8.6
Average value in the tests
Higher memory bandwidth, mbps
17000
12800
Around 1.33 higher bandwidth
Specifications
Complete list of technical specifications
Nanya Technology M2F8G64CB8HC9N-DI 8GB
Samsung M391A1G43EB1-CPB 8GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
37
25
Read speed, GB/s
13.9
12.4
Write speed, GB/s
8.6
10.6
Memory bandwidth, mbps
12800
17000
Other
Description
PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11
PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
Timings / Clock speed
9-9-9-24 / 1600 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
Ranking PassMark (The more the better)
2395
1511
Nanya Technology M2F8G64CB8HC9N-DI 8GB RAM comparisons
SK Hynix HMT41GR7AFR4C-PB 8GB
Kingston 99P5474-050.A00LF 4GB
Samsung M391A1G43EB1-CPB 8GB RAM comparisons
Kingston 9905403-444.A00LF 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Kingston KHX2133C11D3/4GX 4GB
Corsair CMU16GX4M2C3200C16 8GB
Kingston 99U5474-010.A00LF 2GB
G Skill Intl F4-3000C14-8GTZ 8GB
A-DATA Technology DQVE1908 512MB
Thermaltake Technology Co Ltd R009D408GX2-3200C16A 8GB
Kingston KVR800D2N6/2G 2GB
G Skill Intl F4-2666C16-4GRB 4GB
Wilk Elektronik S.A. GR1333D364L9/4G 4GB
G Skill Intl F4-3200C16-8GTZSK 8GB
A-DATA Technology AM2L16BC4R1-B0AS 4GB
G Skill Intl F4-3600C18-32GVK 32GB
Samsung M378A1G43DB0-CPB 8GB
Patriot Memory (PDP Systems) PSD416G320081 16GB
A-DATA Technology AD73I1B1672EG 2GB
Kingston XRGM6C-MIE 16GB
Kingston KHX2133C11D3/4GX 4GB
Crucial Technology CT16G4DFRA266.C8FE 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Shanghai Kuxin Microelectronics Ltd NMUD480E82-2400E 8G
Crucial Technology CT25664BA160B.C16F 2GB
A-DATA Technology AD4S320038G22-B 8GB
Samsung M3 78T2863QZS-CF7 1GB
G Skill Intl F4-3000C16-16GTRS 16GB
A-DATA Technology AD5U48008G-B 8GB
Corsair CMK32GX4M4B3733C17 8GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Micron Technology 18ASF1G72PDZ-2G1B1 8GB
Report a bug
×
Bug description
Source link