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Nanya Technology M2F8G64CB8HC9N-DI 8GB
Samsung M471A2K43EB1-CWE 16GB

Nanya Technology M2F8G64CB8HC9N-DI 8GB vs Samsung M471A2K43EB1-CWE 16GB

Overall score
star star star star star
Nanya Technology M2F8G64CB8HC9N-DI 8GB

Nanya Technology M2F8G64CB8HC9N-DI 8GB

Overall score
star star star star star
Samsung M471A2K43EB1-CWE 16GB

Samsung M471A2K43EB1-CWE 16GB

Differences Specifications Comments

Differences

Nanya Technology M2F8G64CB8HC9N-DI 8GB Reasons to consider
Nanya Technology M2F8G64CB8HC9N-DI 8GB
Report a bug
  • Below the latency in the PassMark tests, ns
    37 left arrow 55
    Around 33% lower latency
Samsung M471A2K43EB1-CWE 16GB Reasons to consider
Samsung M471A2K43EB1-CWE 16GB
Report a bug
  • Faster reading speed, GB/s
    15.8 left arrow 13.9
    Average value in the tests
  • Faster write speed, GB/s
    13.8 left arrow 8.6
    Average value in the tests
  • Higher memory bandwidth, mbps
    25600 left arrow 12800
    Around 2 higher bandwidth

Specifications

Complete list of technical specifications
Nanya Technology M2F8G64CB8HC9N-DI 8GB
Samsung M471A2K43EB1-CWE 16GB
Main characteristics
  • Memory type
    DDR3 left arrow DDR4
  • Latency in PassMark, ns
    37 left arrow 55
  • Read speed, GB/s
    13.9 left arrow 15.8
  • Write speed, GB/s
    8.6 left arrow 13.8
  • Memory bandwidth, mbps
    12800 left arrow 25600
Other
  • Description
    PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 left arrow PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24
  • Timings / Clock speed
    9-9-9-24 / 1600 MHz left arrow 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
  • Ranking PassMark (The more the better)
    2395 left arrow 2701

Nanya Technology M2F8G64CB8HC9N-DI 8GB RAM comparisons

SK Hynix HMT41GR7AFR4C-PB 8GB
Kingston 99P5474-050.A00LF 4GB

Samsung M471A2K43EB1-CWE 16GB RAM comparisons

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Samsung M393B5170FH0-CK0 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
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