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Nanya Technology M2Y1G64TU8HB0B-25C 1GB
Shanghai Kuxin Microelectronics Ltd NMUD480E86-3200 8GB
Compare
Nanya Technology M2Y1G64TU8HB0B-25C 1GB vs Shanghai Kuxin Microelectronics Ltd NMUD480E86-3200 8GB
Overall score
Nanya Technology M2Y1G64TU8HB0B-25C 1GB
Overall score
Shanghai Kuxin Microelectronics Ltd NMUD480E86-3200 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Nanya Technology M2Y1G64TU8HB0B-25C 1GB
Report a bug
Faster reading speed, GB/s
3
19.5
Average value in the tests
Faster write speed, GB/s
2,077.3
15.8
Average value in the tests
Reasons to consider
Shanghai Kuxin Microelectronics Ltd NMUD480E86-3200 8GB
Report a bug
Below the latency in the PassMark tests, ns
19
61
Around -221% lower latency
Higher memory bandwidth, mbps
19200
6400
Around 3 higher bandwidth
Specifications
Complete list of technical specifications
Nanya Technology M2Y1G64TU8HB0B-25C 1GB
Shanghai Kuxin Microelectronics Ltd NMUD480E86-3200 8GB
Main characteristics
Memory type
DDR2
DDR4
Latency in PassMark, ns
61
19
Read speed, GB/s
3,835.2
19.5
Write speed, GB/s
2,077.3
15.8
Memory bandwidth, mbps
6400
19200
Other
Description
PC2-6400, SSTL 1.8V, CAS Supported: 3 4 5
PC4-19200, 1.2V, CAS Supported: 11 12 13 14 15 16 17 18
Timings / Clock speed
5-5-5-15 / 800 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
Ranking PassMark (The more the better)
606
3435
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RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
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Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
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