RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Nanya Technology M2Y51264TU88B0B-3C 512MB
Micron Technology 4ATS1G64HZ-2G3B1 8GB
Compare
Nanya Technology M2Y51264TU88B0B-3C 512MB vs Micron Technology 4ATS1G64HZ-2G3B1 8GB
Overall score
Nanya Technology M2Y51264TU88B0B-3C 512MB
Overall score
Micron Technology 4ATS1G64HZ-2G3B1 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Nanya Technology M2Y51264TU88B0B-3C 512MB
Report a bug
Faster reading speed, GB/s
3
17.1
Average value in the tests
Reasons to consider
Micron Technology 4ATS1G64HZ-2G3B1 8GB
Report a bug
Below the latency in the PassMark tests, ns
28
54
Around -93% lower latency
Faster write speed, GB/s
13.1
1,308.1
Average value in the tests
Higher memory bandwidth, mbps
19200
5300
Around 3.62 higher bandwidth
Specifications
Complete list of technical specifications
Nanya Technology M2Y51264TU88B0B-3C 512MB
Micron Technology 4ATS1G64HZ-2G3B1 8GB
Main characteristics
Memory type
DDR2
DDR4
Latency in PassMark, ns
54
28
Read speed, GB/s
3,573.5
17.1
Write speed, GB/s
1,308.1
13.1
Memory bandwidth, mbps
5300
19200
Other
Description
PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
Timings / Clock speed
5-5-5-15 / 667 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
Ranking PassMark (The more the better)
371
2833
Nanya Technology M2Y51264TU88B0B-3C 512MB RAM comparisons
Nanya Technology M2Y51264TU88B0B-37 512MB
Kingston KF3200C20S4/8G 8GB
Micron Technology 4ATS1G64HZ-2G3B1 8GB RAM comparisons
Patriot Memory (PDP Systems) PSD34G16002 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Samsung M3 93T5750CZA-CE6 2GB
Crucial Technology CT8G4DFD824A.C16FDR2 8GB
Samsung M391B5673EH1-CH9 2GB
Kingston KHX2400C12D4/8GX 8GB
G Skill Intl F3-1600C9-4GAO 4GB
Samsung M378B5273CH0-CH9 4GB
Nanya Technology NT4GC64B8HG0NS-CG 4GB
Kingmax Semiconductor GLAF62F-D8---------- 4GB
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8
G Skill Intl F4-3600C16-8GTZN 8GB
A-DATA Technology ADOVE1A0834E 1GB
Kingston KF2666C15S4/16G 16GB
Samsung M393B5170FH0-CK0 4GB
AMD R748G2400U2S 8GB
SK Hynix HMA451U6AFR8N-TF 4GB
Transcend Information JM2666HLB-8G 8GB
SK Hynix HMT41GU7MFR8A-H9 8GB
Transcend Information JM2666HLB-16G 16GB
Corsair VSA2GSDS667C4 2GB
Crucial Technology CT8G4SFD824A.C16FDD2 8GB
Samsung M378B5773CH0-CH9 2GB
Avant Technology W6451U66J5213ND 4GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Apacer Technology D12.2324WT.001 8GB
SK Hynix HMT151R7TFR4C-H9 4GB
Essencore Limited IM44GU48N21-FFFHM 4GB
TwinMOS 9DNPBNZB-TATP 4GB
Crucial Technology CT4G4DFS8213.C8FBR2 4GB
Report a bug
×
Bug description
Source link