RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Nanya Technology NT4GC64B8HG0NS-CG 4GB
Gloway International Co. Ltd. WAR4U2666D19161C-S 16GB
Compare
Nanya Technology NT4GC64B8HG0NS-CG 4GB vs Gloway International Co. Ltd. WAR4U2666D19161C-S 16GB
Overall score
Nanya Technology NT4GC64B8HG0NS-CG 4GB
Overall score
Gloway International Co. Ltd. WAR4U2666D19161C-S 16GB
Differences
Specifications
Comments
Differences
Reasons to consider
Nanya Technology NT4GC64B8HG0NS-CG 4GB
Report a bug
Reasons to consider
Gloway International Co. Ltd. WAR4U2666D19161C-S 16GB
Report a bug
Below the latency in the PassMark tests, ns
31
42
Around -35% lower latency
Faster reading speed, GB/s
16.4
9.7
Average value in the tests
Faster write speed, GB/s
10.5
6.0
Average value in the tests
Higher memory bandwidth, mbps
21300
10600
Around 2.01 higher bandwidth
Specifications
Complete list of technical specifications
Nanya Technology NT4GC64B8HG0NS-CG 4GB
Gloway International Co. Ltd. WAR4U2666D19161C-S 16GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
42
31
Read speed, GB/s
9.7
16.4
Write speed, GB/s
6.0
10.5
Memory bandwidth, mbps
10600
21300
Other
Description
PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
Timings / Clock speed
7-7-7-20 / 1333 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
Ranking PassMark (The more the better)
1396
3039
Nanya Technology NT4GC64B8HG0NS-CG 4GB RAM comparisons
Corsair CMY8GX3M2A2666C10 4GB
Corsair CMSO4GX3M1A1333C9 4GB
Gloway International Co. Ltd. WAR4U2666D19161C-S 16GB RAM comparisons
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Crucial Technology CT51264BD1339.M16F 4GB
G Skill Intl F4-4133C19-8GTZKWC 8GB
Samsung M393B5270CH0-CH9 4GB
G Skill Intl F4-2666C15-8GVK 8GB
A-DATA Technology DQKD1A08 1GB
Corsair CMK16GX4M2D3600C16 8GB
SK Hynix HYMP112U64CP8-Y5 1GB
Apacer Technology D12.2324CS.001 8GB
Kingston HX316C10F/8 8GB
Kingston KVT8FP-HYC 4GB
Kingston 9965525-010.A00LF 4GB
Patriot Memory (PDP Systems) PSD48G320081 8GB
PNY Electronics PNY 2GB
Corsair CM4X16GE2666C16K4 16GB
A-DATA Technology DDR3 1600 4GB
Micron Technology 8ATF1G64HZ-2G3A1 8GB
G Skill Intl F3-10600CL9-2GBNT 2GB
Crucial Technology BLS8G4D32AESCK.M8FE1 8GB
Nanya Technology NT4GC72B4NA1NL-CG 4GB
Samsung T471A1K43CB1-CRC 8GB
Kingmax Semiconductor FLFF65F-C8KL9 4GB
Kingmax Semiconductor FLFF65F-C8KL9 4GB
Samsung M393B2G70BH0-YK0 16GB
SK Hynix HMA81GU6DJR8N-XN 8GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Corsair CM4B16G2L2666A18K2 16GB
PNY Electronics PNY 2GB
Samsung V-GeN D4S4GL30A16TS5 4GB
Report a bug
×
Bug description
Source link