RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Nanya Technology NT512T64U88B0BY-3C 512MB
Samsung M378A1K43BB1-CRC 8GB
Compare
Nanya Technology NT512T64U88B0BY-3C 512MB vs Samsung M378A1K43BB1-CRC 8GB
Overall score
Nanya Technology NT512T64U88B0BY-3C 512MB
Overall score
Samsung M378A1K43BB1-CRC 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Nanya Technology NT512T64U88B0BY-3C 512MB
Report a bug
Faster reading speed, GB/s
2
15.9
Average value in the tests
Reasons to consider
Samsung M378A1K43BB1-CRC 8GB
Report a bug
Below the latency in the PassMark tests, ns
22
71
Around -223% lower latency
Faster write speed, GB/s
9.5
1,322.6
Average value in the tests
Higher memory bandwidth, mbps
19200
5300
Around 3.62 higher bandwidth
Specifications
Complete list of technical specifications
Nanya Technology NT512T64U88B0BY-3C 512MB
Samsung M378A1K43BB1-CRC 8GB
Main characteristics
Memory type
DDR2
DDR4
Latency in PassMark, ns
71
22
Read speed, GB/s
2,831.6
15.9
Write speed, GB/s
1,322.6
9.5
Memory bandwidth, mbps
5300
19200
Other
Description
PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
Timings / Clock speed
5-5-5-15 / 667 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
Ranking PassMark (The more the better)
399
2611
Nanya Technology NT512T64U88B0BY-3C 512MB RAM comparisons
Hynix Semiconductor (Hyundai Electronics) HYMP564U64EP8-S5 512MB
G Skill Intl F4-3200C16-16GTZSK 16GB
Samsung M378A1K43BB1-CRC 8GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Kingston 99U5474-010.A00LF 2GB
GIGA - BYTE Technology Co Ltd AR36C18S8K2HU416R 8GB
Corsair CMSX32GX4M2A3200C22 16GB
G Skill Intl F4-2133C15-4GRB 4GB
G Skill Intl F3-1866C8-8GTX 8GB
G Skill Intl F4-4000C15-8GTRS 8GB
Samsung M471B1G73DB0-YK0 8GB
Kingston KHX3000C16/16GX 16GB
A-DATA Technology AM2U16BC4P2-B05B 4GB
Hynix Semiconductor (Hyundai Electronics) HMA41GU6AFR8N
Kingston 99U5474-010.A00LF 2GB
Apacer Technology 78.CAGPN.AZ50C 8GB
Corsair CMZ16GX3M2A2400C10 8GB
Micron Technology 16G3200CL22 16GB
Samsung M471B5674QH0-YK0 2GB
G Skill Intl F4-3200C16-8GTZB 8GB
Kingston 9905403-090.A01LF 4GB
Kingston 99U5701-049.A00G 16GB
Golden Empire 1GB DDR2 800 CAS=4 1GB
Crucial Technology BLT16G4D30AETA.K16FB 16GB
Samsung M393B1G70BH0-CK0 8GB
G Skill Intl F4-3200C15-4GRKD 4GB
Samsung M378B5173EB0-YK0 4GB
G Skill Intl F4-3600C16-8GTZR 8GB
Corsair CM3X8GA2400C11Y2R 8GB
Crucial Technology BLE8G4D34AEEAK.K8FB 8GB
Micron Technology 18HTF12872AY-800F1 1GB
Crucial Technology CT8G4SFRA266.M8FRS 8GB
Report a bug
×
Bug description
Source link