RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Peak Electronics 256X64M-67E 2GB
Chun Well Technology Holding Limited CL18-22-22 D4-3600 16GB
Compare
Peak Electronics 256X64M-67E 2GB vs Chun Well Technology Holding Limited CL18-22-22 D4-3600 16GB
Overall score
Peak Electronics 256X64M-67E 2GB
Overall score
Chun Well Technology Holding Limited CL18-22-22 D4-3600 16GB
Differences
Specifications
Comments
Differences
Reasons to consider
Peak Electronics 256X64M-67E 2GB
Report a bug
Faster reading speed, GB/s
5
17.3
Average value in the tests
Reasons to consider
Chun Well Technology Holding Limited CL18-22-22 D4-3600 16GB
Report a bug
Below the latency in the PassMark tests, ns
34
39
Around -15% lower latency
Faster write speed, GB/s
14.5
1,597.0
Average value in the tests
Higher memory bandwidth, mbps
17000
5300
Around 3.21 higher bandwidth
Specifications
Complete list of technical specifications
Peak Electronics 256X64M-67E 2GB
Chun Well Technology Holding Limited CL18-22-22 D4-3600 16GB
Main characteristics
Memory type
DDR2
DDR4
Latency in PassMark, ns
39
34
Read speed, GB/s
5,022.9
17.3
Write speed, GB/s
1,597.0
14.5
Memory bandwidth, mbps
5300
17000
Other
Description
PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5
PC4-17000, 1.2V, CAS Supported: 14 15 16
Timings / Clock speed
5-5-5-15 / 667 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
Ranking PassMark (The more the better)
753
3606
Peak Electronics 256X64M-67E 2GB RAM comparisons
A Force Manufacturing Ltd. 256X64M-67E 2GB
Kingston ACR26D4U9S8MH-8 8GB
Chun Well Technology Holding Limited CL18-22-22 D4-3600 16GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
SK Hynix HMT325U6CFR8C-PB 2GB
Micron Technology 8ATF1G64HZ-2G6E1 8GB
Samsung M378B1G73EB0-CK0 8GB
G Skill Intl F4-2666C18-32GTZN 32GB
Samsung M393B2G70BH0-CK0 16GB
G Skill Intl F4-4000C19-16GTZKK 16GB
Kingston 9905403-156.A00LF 2GB
G Skill Intl F4-4133C19-8GTZSWF 8GB
Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
Samsung M471A1K43CB1-CRC 8GB
Patriot Memory (PDP Systems) PSD34G16002 4GB
Micron Technology 8ATF51264AZ-2G1A1 4GB
Samsung M393B5170FH0-CK0 4GB
G Skill Intl F4-3200C16-8GRKB 8GB
Corsair CMZ16GX3M2A2400C10 8GB
Micron Technology 72ASS8G72LZ-2G3B2 64GB
Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
Gloway International Co. Ltd. TYA4U3000E16081C 8GB
Elpida EBJ41UF8BDU5-GN-F 4GB
SK Hynix HMA451U6AFR8N-TF 4GB
Kingston 9965525-140.A00LF 8GB
Kingston KHX2133C13D4/8GX 8GB
Samsung M471B1G73BH0-YK0 8GB
G Skill Intl F4-4000C15-8GTRS 8GB
Elpida EBJ17RG4EFWA-DJ-F 16GB
Transcend Information TS2GLH64V6B 16GB
Samsung M378B5673EH1-CF8 2GB
Kingston 9905663-012.A00G 16GB
Report a bug
×
Bug description
Source link